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BYW96E(Z)

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-27,
CategoryDiscrete semiconductor    diode   
File Size58KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

BYW96E(Z) Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-27,

BYW96E(Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
JEDEC-95 codeDO-27
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current70 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current10 µA
Maximum reverse recovery time0.3 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

BYW96E(Z) Preview

BL
FEATURES
GALAXY ELECTRICAL
BY W 9 6 D(Z) ---BY W 9 6 E(Z)
VOLTAGE RANGE: 800 --- 1000 V
CURRENT: 3.0 A
FAST RECOVERY RECT IFIERS
Low cos t
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon Alcohol,Is opropanol and
s im ilar s olvents
DO - 27
MECHANICAL DATA
Cas e: JEDEC DO--27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces , 1.15 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYW 96D
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
BYW 96E
1000
700
1000
3.0
UNITS
V
V
V
A
V
R R M
V
R MS
V
D C
I
F (AV)
800
560
800
Peak f orw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
F SM
70.0
A
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.5
10.0
100.0
300
32
22
-55-----+150
-55-----+150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
N OTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V D C .
3. Therm al resistance f rom junction to am bient.
www.galaxycn.com
Document Number 0261052
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
50
N.1.
10
N.1.
BYW96D(Z)---BYW96E(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
t
rr
+0.5A
D.U.T.
(+)
50VDC
(APPROX)
(-)
1
N.1.
( - )
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
( + )
0
-0.25A
-1.0A
NOTE
S:1.RISETIM =7ns M INP IM E
E
AX. UT P DANCE
=1M .22pF
2.R TIM =10ns M SOURCEIM E
ISE E
AX.
P DANCE
=5O
SE TIM BASEFOR 50/100 ns /cm
T E
1 cm
FIG.2 --FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
PEAK FORWARD SURGE CURRENT
AMPERES
FIG.3 --PEAK FORWARD SURGE CURRENT
3.0
100
T
J
=125
8.3ms Single
Half
Sine-Wave
2.4
80
1.8
Single Phase
Half W 60Hz
alf
Resistive or
Inductive Load
60
1.2
40
0.6
0
0
25
50
75
100
125
150
175
20
0
1
2
4
6
10
20
40
60
100
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS REVERSE CURRENT
AMPERES
FIG.5-- TYPICAL JUNCTION CAPACITANCE
100
T
J
=25
Pulse Width=300
µ
S
JUNCTION CAPACITANCE pF
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
100
60
40
20
10
4
2
1
.1
T
J
=25
f=1MHz
.2
.4
1.0
2
4
10
20
40
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0261052
BL
GALAXY ELECTRICAL
2.

BYW96E(Z) Related Products

BYW96E(Z) BYW96D(Z)
Description Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-27, Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-27,
Is it Rohs certified? conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
package instruction O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknow
ECCN code EAR99 EAR99
application FAST RECOVERY FAST RECOVERY
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.5 V 1.5 V
JEDEC-95 code DO-27 DO-27
JESD-30 code O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 70 A 70 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 1000 V 800 V
Maximum reverse current 10 µA 10 µA
Maximum reverse recovery time 0.3 µs 0.3 µs
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
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