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BUK7Y12-55B_15

Description
N-channel TrenchMOS standard level FET
File Size181KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK7Y12-55B_15 Overview

N-channel TrenchMOS standard level FET

BUK7Y12-55B
N-channel TrenchMOS standard level FET
Rev. 03 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Advanced braking systems (ABS)
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
55
V
61.8 A
105
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 20 A;
T
j
= 25 °C; see
Figure 13;
see
Figure 12
-
8.2
12
mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 61.8 A; V
sup
55 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 10 V;
avalanche energy T
j(init)
= 25 °C; unclamped
gate-drain charge I
D
= 20 A; V
DS
= 44 V;
V
GS
= 10 V; see
Figure 14
-
-
129
mJ
Dynamic characteristics
Q
GD
-
14.8 -
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