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TIP48BD

Description
1A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size396KB,61 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

TIP48BD Overview

1A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

TIP48BD Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage NPN Silicon
Power Transistors
. . . designed for line operated audio output amplifier, Switchmode power supply
drivers and other switching applications.
250 V to 400 V (Min) — VCEO(sus)
1 A Rated Collector Current
Popular TO–220 Plastic Package
TIP47 *
TIP49*
TIP48 *
TIP50*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Symbol
VCEO
VCB
VEB
IC
IB
TIP47
250
350
TIP48
300
400
TIP49
350
450
TIP50
400
500
Unit
Vdc
Vdc
Vdc
Adc
Adc
1.0 AMPERE
POWER TRANSISTORS
NPN SILICON
250 – 300 – 350 – 400 VOLTS
40 WATTS
PD, POWER DISSIPATION (WATTS)
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Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
5.0
1.0
2.0
0.6
Collector Current — Continuous
Peak
Base Current
Total Power Dissipation
@ TC = 25
_
C
Derate above 25
_
C
Total Power Dissipation
@ TA = 25
_
C
Derate above 25
_
C
PD
40
0.32
Watts
W/
_
C
Watts
W/
_
C
mJ
PD
2.0
0.016
20
Unclamped Inducting Load
Energy (See Figure 8)
E
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
CASE 221A–06
TO–220AB
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJC
R
θJA
Max
Unit
Thermal Resistance, Junction to Case
3.125
62.5
_
C/W
_
C/W
Thermal Resistance, Junction to Ambient
TA
4
TC
40
3
30
TC
2
20
1
10
TA
0
0
0
20
40
60
100
120
80
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Bipolar Power Transistor Device Data
3–887
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