AM29LV160MT-120SE datasheet, PDF

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AM29LV160MT-120SE: DescriptionFlash, 1MX16, 120ns, PDSO44, SO-44; Categorystorage storage; File Size1MB，51 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/

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AM29LV160MT-120SE Overview

Flash, 1MX16, 120ns, PDSO44, SO-44

AM29LV160MT-120SE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SPANSION
Parts packaging code	SOIC
package instruction	SO-44
Contacts	44
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	120 ns
Other features	TOP BOOT BLOCK
Spare memory width	8
startup block	TOP
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PDSO-G44
JESD-609 code	e0
length	28.2 mm
memory density	16777216 bit
Memory IC Type	FLASH
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of departments/size	1,2,1,31
Number of terminals	44
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP44,.63
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	3/3.3 V
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	2.8 mm
Department size	16K,8K,32K,64K
Maximum standby current	0.000005 A
Maximum slew rate	0.06 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
switch bit	YES
type	NOR TYPE
width	13.3 mm

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ADVANCE INFORMATION

Am29LV160M

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit

3.0 Volt-only Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read and

write operations and for compatibility with high

performance 3.3 volt microprocessors

Manufactured on 0.23 µm MirrorBit

process

technology

— Fully compatible with Am29LV160D device

High performance

— Access times as fast as 70 ns

Ultra low power consumption (typical values at

5 MHz)

— 400 nA Automatic Sleep mode current

— 400 nA standby mode current

— 15 mA read current

— 40 mA program/erase current

Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

thirty-one 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

thirty-one 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that sector

Sectors can be locked in-system or via

programming equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

Unlock Bypass Program Command

— Reduces overall programming time when issuing

multiple program command sequences

Top or bottom boot block configurations

available

Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

Minimum 1,000,000 write cycle guarantee

per sector

20-year data retention at 125°C

— Reliable operation for the life of the system

Package option

— 48-ball FBGA

— 48-pin TSOP

— 44-pin SO

— 64-ball Fortified BGA

CFI (Common Flash Interface) compliant

— Provides device-specific information to the

system, allowing host software to easily

reconfigure for different Flash devices

Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

Data# Polling and toggle bits

— Provides a software method of detecting program

or erase operation completion

Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion (not available

on 44-pin SO)

Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication#

25974

Rev:

Amendment/1

Issue Date:

July 3, 2002

TABLE OF CONTENTS

Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9

Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 10

Table 1. Am29LV160M Device Bus Operations ..............................10

RY/BY#: Ready/Busy# ............................................................ 27

DQ6: Toggle Bit I .................................................................... 27

DQ2: Toggle Bit II ................................................................... 27

Reading Toggle Bits DQ6/DQ2 ............................................... 27

Figure 6. Toggle Bit Algorithm........................................................ 28

DQ3: Sector Erase Timer ....................................................... 29

Table 10. Write Operation Status ................................................... 29

Absolute Maximum Ratings . . . . . . . . . . . . . . . . 30

Figure 7. Maximum Negative Overshoot Waveform ...................... 30

Figure 8. Maximum Positive Overshoot Waveform........................ 30

Word/Byte Configuration ........................................................ 10

Requirements for Reading Array Data ................................... 10

Writing Commands/Command Sequences ............................ 11

Program and Erase Operation Status .................................... 11

Standby Mode ........................................................................ 11

Automatic Sleep Mode ........................................................... 11

RESET#: Hardware Reset Pin ............................................... 12

Output Disable Mode .............................................................. 12

Table 2. Sector Address Tables (Am29LV160MT) .........................13

Table 3. Sector Address Tables (Am29LV160MB) .........................14

Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 30

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 31

Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Figure 9. Test Setup....................................................................... 33

Table 11. Test Specifications ......................................................... 33

Figure 10. Input Waveforms and Measurement Levels ................. 33

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 34

Read Operations .................................................................... 34

Figure 11. Read Operations Timings ............................................. 34

Autoselect Mode ..................................................................... 15

Table 4. Am29LV160M Autoselect Codes (High Voltage Method) .15

Hardware Reset (RESET#) .................................................... 35

Figure 12. RESET# Timings .......................................................... 35

Sector Protection/Unprotection ............................................... 15

Temporary Sector Unprotect .................................................. 16

Figure 1. Temporary Sector Unprotect Operation........................... 16

Figure 2. In-System Single High Voltage Sector Protect/Unprotect Al-

gorithms .......................................................................................... 17

Word/Byte Configuration (BYTE#) ........................................ 36

Figure 13. BYTE# Timings for Read Operations............................ 36

Figure 14. BYTE# Timings for Write Operations............................ 36

Erase/Program Operations ..................................................... 37

Figure 15. Program Operation Timings..........................................

Figure 16. Chip/Sector Erase Operation Timings ..........................

Figure 17. Data# Polling Timings (During Embedded Algorithms).

Figure 18. Toggle Bit Timings (During Embedded Algorithms)......

Figure 19. DQ2 vs. DQ6 for Erase and

Erase Suspend Operations ............................................................

Figure 20. Temporary Sector Unprotect/Timing Diagram ..............

Figure 21. Sector Protect/Unprotect Timing Diagram ....................

Figure 22. Alternate CE# Controlled Write Operation Timings ......

Common Flash Memory Interface (CFI) . . . . . . . 18

Table 5. CFI Query Identification String ..........................................18

Table 6. System Interface String .....................................................18

Table 7. Device Geometry Definition ..............................................19

Table 8. Primary Vendor-Specific Extended Query ........................19

Hardware Data Protection ...................................................... 20

Low V

Write Inhibit .............................................................. 20

Write Pulse “Glitch” Protection ............................................... 20

Logical Inhibit .......................................................................... 20

Power-Up Write Inhibit ............................................................ 20

Command Definitions . . . . . . . . . . . . . . . . . . . . . . 21

Reading Array Data ................................................................ 21

Reset Command ..................................................................... 21

Autoselect Command Sequence ............................................ 21

Word/Byte Program Command Sequence ............................. 21

Unlock Bypass Command Sequence ..................................... 22

Figure 3. Program Operation .......................................................... 22

Chip Erase Command Sequence ........................................... 22

Sector Erase Command Sequence ........................................ 23

Erase Suspend/Erase Resume Commands ........................... 23

Figure 4. Erase Operation............................................................... 24

Command Definitions ............................................................. 25

Table 9. Am29LV160M Command Definitions ................................25

Write Operation Status . . . . . . . . . . . . . . . . . . . . . 26

DQ7: Data# Polling ................................................................. 26

Figure 5. Data# Polling Algorithm ................................................... 26

Erase and Programming Performance . . . . . . . 45

Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 45

TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 45

Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 46

TS 048—48-Pin Standard TSOP ............................................ 46

TSR048—48-Pin Reverse TSOP ........................................... 47

FBC048—48-Ball Fine-Pitch Ball Grid Array (FBGA)

8 x 9 mm ................................................................................ 48

SO 044—44-Pin Small Outline Package ................................ 49

LAA064—64-Ball Fortified Ball Grid Array (FBGA) 13 x 11 mm

Package .................................................................................. 50

Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 51

Revision A (June 24, 2002) .................................................... 51

Revision A + 1 (July 3, 2002) .................................................. 51

Am29LV160M

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