30KP70AE3 datasheet, PDF - EEWORLD Datasheet

30KP70AE3: DescriptionTrans Voltage Suppressor Diode, 30000W, 70V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2; CategoryDiscrete semiconductor diode; File Size2MB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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30KP70AE3 Overview

Trans Voltage Suppressor Diode, 30000W, 70V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microsemi
package instruction	ROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum breakdown voltage	86 V
Minimum breakdown voltage	77.8 V
Breakdown voltage nominal value	81.9 V
Shell connection	ISOLATED
Maximum clamping voltage	114 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	30000 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	1.61 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	70 V
surface mount	NO
technology	AVALANCHE
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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