TK20J60U
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (DTMOS
II)
TK20J60U
Switching Regulator Applications
15.9 MAX.
Unit: mm
Ф3.2
±
0.2
1.0
4.5
9.0
2.0
3.3 MAX.
2.0
±
0.3
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
±30
20
40
190
144
15
19
150
−55
to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1.0
＋0.3
－0.25
5.45
±
0.2
1.8 MAX.
＋0.3
0.6
－0.1
5.45
±
0.2
4.8 MAX.
2.8
1
2
3
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
1. Gate
2. Drain (heatsink)
3. Source
JEDEC
JEITA
TOSHIBA
⎯
SC-65
2-16C1B
Weight : 4.6 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
0.658
50
Unit
2
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 1.12 mH, R
G
= 25
Ω,
I
AR
= 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
20.5
±
0.5
Absolute Maximum Ratings
(Ta = 25°C)
2.0
20.0
±
0.3
•
•
•
•
Low drain-source ON-resistance: R
DS (ON)
= 0.165
Ω
(typ.)
High forward transfer admittance:
⎪Y
fs
⎪
= 12 S (typ.)
Low leakage current: I
DSS
= 100
μA
(max) (V
DS
= 600 V)
Enhancement mode: V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)
3
Start of commercial production
2008-06
1
2013-11-01
TK20J60U
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
=
10 V, I
D
=
20 A
Duty
≤
1%, t
w
=
10
μs
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
10 V
V
GS
0V
50
Ω
I
D
=
10 A
V
OUT
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±30
V, V
DS
=
0 V
V
DS
=
600 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
10 A
V
DS
=
10 V, I
D
=
10 A
Min
⎯
⎯
600
3.0
⎯
3.0
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
0.165
12
1470
150
3500
40
80
12
100
27
16
11
Max
±1
100
⎯
5.0
0.19
⎯
⎯
⎯
pF
Unit
μA
μA
V
V
Ω
S
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
R
L
=30 Ω
V
DD
≈
300 V
⎯
⎯
⎯
⎯
⎯
nC
Source-Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
20 A, V
GS
=
0 V
I
DR
=
20 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
450
8.1
Max
20
40
−1.7
⎯
⎯
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
TOSHIBA
K20J60U
Part No.
(or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2
2013-11-01
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