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KMM5328000BSWG-5

Description
Fast Page DRAM Module, 8MX32, 50ns, CMOS, SIMM-72
Categorystorage    storage   
File Size355KB,18 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

KMM5328000BSWG-5 Overview

Fast Page DRAM Module, 8MX32, 50ns, CMOS, SIMM-72

KMM5328000BSWG-5 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeSIMM
package instructionSIMM, SSIM72
Contacts72
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time50 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-XSMA-N72
memory density268435456 bit
Memory IC TypeFAST PAGE DRAM MODULE
memory width32
Number of functions1
Number of ports1
Number of terminals72
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX32
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeSIMM
Encapsulate equivalent codeSSIM72
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply5 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height25.4 mm
self refreshNO
Maximum standby current0.004 A
Maximum slew rate0.244 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationSINGLE
DRAM MODULE
KMM5328000BSW/BSWG Fast Page Mode
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
GENERAL DESCRIPTION
The Samsung KMM5328000B is a 8Mx32bits Dynamic RAM
high density memory module. The Samsung KMM5328000B
consists of four CMOS 4Mx16bits DRAMs in TSOP packages
mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF
decoupling capacitor is mounted on the printed circuit board
for each DRAM. The KMM5328000B is a Single In-line Mem-
ory Module with edge connections and is intended for mount-
ing into 72 pin edge connector sockets.
KMM5328000BSW/BSWG
FEATURES
• Part Identification
- KMM5328000BSW(4K cycles/64ms Ref, TSOP, Solder)
- KMM5328000BSWG(4K cycles/64ms Ref, TSOP, Gold)
• Fast Page Mode Operation
• CAS-before-RAS & Hidden Refresh capability
• RAS-only refresh capability
• TTL compatible inputs and outputs
• Single +5V±10% power supply
• JEDEC standard PDpin & pinout
• PCB : Height(1000mil), double sided component
PERFORMANCE RANGE
Speed
-5
-6
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
90ns
110ns
t
PC
35ns
40ns
PIN CONFIGURATIONS
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Symbol
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
Vcc
NC
A0
A1
A2
A3
A4
A5
A6
A10
DQ4
DQ22
DQ5
DQ23
DQ6
DQ24
DQ7
DQ25
A7
A11
Vcc
A8
A9
RAS3
RAS2
NC
NC
Pin
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Symbol
NC
NC
Vss
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1
NC
W
NC
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
Vcc
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
Vss
PIN NAMES
Pin Name
A0 - A11
DQ0-7, DQ9-16
DQ18-25, DQ27-34
W
RAS0 - RAS3
CAS0 - CAS3
PD1 -PD4
Vcc
Vss
NC
Function
Address Inputs
Data In/Out
Read/Write Enable
Row Address Strobe
Column Address Strobe
Presence Detect
Power(+5V)
Ground
No Connection
PRESENCE DETECT PINS (Optional)
Pin
PD1
PD2
PD3
PD4
50NS
NC
Vss
Vss
Vss
60NS
NC
Vss
NC
NC
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.

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Description Fast Page DRAM Module, 8MX32, 50ns, CMOS, SIMM-72 Fast Page DRAM Module, 8MX32, 60ns, CMOS, SIMM-72 Fast Page DRAM Module, 8MX32, 50ns, CMOS, SIMM-72 Fast Page DRAM Module, 8MX32, 60ns, CMOS, SIMM-72
Parts packaging code SIMM SIMM SIMM SIMM
package instruction SIMM, SSIM72 SIMM, SSIM72 SIMM, SSIM72 SIMM, SSIM72
Contacts 72 72 72 72
Reach Compliance Code unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99
access mode FAST PAGE FAST PAGE FAST PAGE FAST PAGE
Maximum access time 50 ns 60 ns 50 ns 60 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type COMMON COMMON COMMON COMMON
JESD-30 code R-XSMA-N72 R-XSMA-N72 R-XSMA-N72 R-XSMA-N72
memory density 268435456 bit 268435456 bit 268435456 bit 268435456 bi
Memory IC Type FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE
memory width 32 32 32 32
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 72 72 72 72
word count 8388608 words 8388608 words 8388608 words 8388608 words
character code 8000000 8000000 8000000 8000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 8MX32 8MX32 8MX32 8MX32
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code SIMM SIMM SIMM SIMM
Encapsulate equivalent code SSIM72 SSIM72 SSIM72 SSIM72
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096 4096
Maximum seat height 25.4 mm 25.4 mm 25.4 mm 25.4 mm
self refresh NO NO NO NO
Maximum standby current 0.004 A 0.004 A 0.004 A 0.004 A
Maximum slew rate 0.244 mA 0.224 mA 0.244 mA 0.224 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V
surface mount NO NO NO NO
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location SINGLE SINGLE SINGLE SINGLE
Maker SAMSUNG SAMSUNG - SAMSUNG
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