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KM41V4000CP-6

Description
Fast Page DRAM, 4MX1, 60ns, CMOS, PDIP20, 0.300 INCH, DIP-20
Categorystorage    storage   
File Size55KB,1 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM41V4000CP-6 Overview

Fast Page DRAM, 4MX1, 60ns, CMOS, PDIP20, 0.300 INCH, DIP-20

KM41V4000CP-6 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeDIP
package instructionDIP,
Contacts20
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time60 ns
JESD-30 codeR-PDIP-T20
length26.4 mm
memory density4194304 bit
Memory IC TypeFAST PAGE DRAM
memory width1
Number of functions1
Number of ports1
Number of terminals20
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
organize4MX1
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum seat height5.08 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width7.62 mm
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