Rectifier Diode, Schottky, 1 Phase, 1 Element, Silicon
| Parameter Name | Attribute value |
| Maker | Diodes Incorporated |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknown |
| application | GENERAL PURPOSE |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 0.65 V |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -65 °C |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum power dissipation | 0.2 W |
| Certification status | Not Qualified |
| Maximum reverse current | 0.5 µA |
| surface mount | NO |
| technology | SCHOTTKY |
| Terminal form | WIRE |
| Terminal location | AXIAL |
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