BC860 datasheet, PDF - EEWORLD Datasheet

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BC860: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size35KB，3 Pages; ManufacturerDiodes Incorporated

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BC860 Overview

Transistor

BC860 Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	4.5 pF
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power consumption environment	0.3 W
Maximum power dissipation(Abs)	0.3 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
VCEsat-Max	0.6 V

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SOT23 PNP SILICON PLANAR

GENERAL PURPOSE TRANSISTORS

ISSUE 6 - APRIL 1997

PARTMARKING DETAILS

BC856A3A

BC856BZ3B

BC857AZ3E

BC857B3F

BC857C3G

BC858A3J

BC858B3K

BC858C3L

BC859AZ4A

BC859B4B

BC859CZ4C

BC860AZ4E

BC860B4F

BC860C4GZ

COMPLEMENTARY TYPES

BC856

BC857

BC858

BC859

BC860

BC846

BC847

BC848

BC849

BC850

BC856

BC858

BC860

BC857

BC859

C

B

SOT23

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

BC856

BC857

BC858

BC859

BC860

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage

Temperature Range

PARAMETER

SYMBOL

Max

Collector Cut-Off Current I

CBO

Max

V

CBO

V

CES

V

CEO

V

EBO

I

C

I

EM

I

BM

I

EM

P

tot

T

j

:T

stg

-80

-65

-50

-45

-30

-5

-100

-200

330

-55 to +150

-50

-45

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

BC856 BC857 BC858 BC859 BC860

-15

-4

-75 -75

-300 -300

-75

-300

-250

-650

-300

-600

-700

-850

-600 -600

-650 -650

-750 -750

-600

-650

-750

-820

-580 -580

-650 -650

-750 -750

-75 -75

-250 -250

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

V

CE(sat)

Typ

Max.

Typ

Max.

Typ

Max.

V

BE(sat)

Typ

UNIT CONDITIONS.

nA

V

CB

= -30V

V

CB

= -30V

µ

A

Tamb=150°C

mV I

C

=-10mA,

I

B

=-0.5mA

mV I

C

=-100mA,

I

B

=-5mA

mV I

C

=-10mA*

mV

I

C

=-10mA,

I

B

=-0.5mA

I

C

=-100mA,

I

B

=-5mA

I

C

=-2mA

V

CE

=-5V

I

C

=-10mA

V

CE

=-5V

Base-Emitter Voltage

V

BE

Min

Typ

Max

* Collector-Emitter Saturation Voltage at I

C

= 10mA for the characteristics going through the

operating point I

C

= 11mA, V

CE

= 1V at constant base current.

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