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BCP5616QTC

Description
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size375KB,7 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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BCP5616QTC Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-4

BCP5616QTC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 4K
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
BCP5616Q
80V NPN MEDIUM POWER TRANSISTOR IN SOT223
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Applications
Medium Power Switching or Amplification Applications
AF Driver and Output Stages
Features
BV
CEO
> 80V
I
C
= 1A High Continuous Collector Current
I
CM
= 2A Peak Pulse Current
2W Power Dissipation
Low Saturation Voltage V
CE(SAT)
< 500mV @ 0.5A
Complementary PNP Type: BCP5316Q
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
SOT223
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Notes 4 & 5)
Product
BCP5616QTA
BCP5616QTC
Notes:
Compliance
Automotive
Automotive
Marking
BCP 5616
BCP 5616
Reel Size (inches)
7
13
Tape Width (mm)
12
12
Quantity per Reel
1,000
4,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
BCP
5616
BCP5616Q
Datasheet Number: DS36981 Rev. 3 - 2
YWW
BCP 5616 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 6 = 2016)
WW or WW = Week Code (01~53)
1 of 7
www.diodes.com
June 2016
© Diodes Incorporated

BCP5616QTC Related Products

BCP5616QTC
Description Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-4
Is it Rohs certified? conform to
Maker Diodes Incorporated
Reach Compliance Code compliant
ECCN code EAR99
Samacsys Description Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 4K
Other features HIGH RELIABILITY
Shell connection COLLECTOR
Maximum collector current (IC) 1 A
Collector-emitter maximum voltage 80 V
Configuration SINGLE
Minimum DC current gain (hFE) 25
JESD-30 code R-PDSO-G4
JESD-609 code e3
Number of components 1
Number of terminals 4
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type NPN
Guideline AEC-Q101
surface mount YES
Terminal surface Matte Tin (Sn)
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature 30
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 150 MHz
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