1A, 60V, NPN, Si, POWER TRANSISTOR, TO-39
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Diodes Incorporated |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 1 A |
| Collector-based maximum capacity | 6 pF |
| Collector-emitter maximum voltage | 60 V |
| Configuration | DARLINGTON |
| Minimum DC current gain (hFE) | 1000 |
| JEDEC-95 code | TO-39 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | 235 |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 7.5 W |
| Certification status | Not Qualified |
| Guideline | CECC |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 80 MHz |
| VCEsat-Max | 1.6 V |
| BD322A | BD320B | BD322B | BD323B | |
|---|---|---|---|---|
| Description | 1A, 60V, NPN, Si, POWER TRANSISTOR, TO-39 | 1A, 60V, NPN, Si, POWER TRANSISTOR, TO-39 | 1A, 60V, NPN, Si, POWER TRANSISTOR, TO-39 | 2A, 60V, NPN, Si, POWER TRANSISTOR, TO-39 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 1 A | 1 A | 1 A | 2 A |
| Collector-based maximum capacity | 6 pF | 6 pF | 6 pF | 8.5 pF |
| Collector-emitter maximum voltage | 60 V | 60 V | 60 V | 60 V |
| Configuration | DARLINGTON | DARLINGTON | DARLINGTON | DARLINGTON |
| Minimum DC current gain (hFE) | 1000 | 5000 | 5000 | 5000 |
| JEDEC-95 code | TO-39 | TO-39 | TO-39 | TO-39 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | 235 | 235 | 235 | 235 |
| Polarity/channel type | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 7.5 W | 5 W | 7.5 W | 10 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Guideline | CECC | CECC | CECC | CECC |
| surface mount | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 80 MHz | 80 MHz | 80 MHz | 80 MHz |
| VCEsat-Max | 1.6 V | 1.6 V | 1.6 V | 1.7 V |
| Maker | Diodes Incorporated | Diodes Incorporated | - | Diodes Incorporated |
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