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BZM55C33-7

Description
Zener Diode, 33V V(Z), 6.06%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, MICROMELF-2
CategoryDiscrete semiconductor    diode   
File Size66KB,3 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

BZM55C33-7 Overview

Zener Diode, 33V V(Z), 6.06%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, MICROMELF-2

BZM55C33-7 Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage33 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance6.06%
Working test current5 mA
BZM55C2V4 - BZM55C75
500mW SURFACE MOUNT ZENER DIODE
Features
·
·
·
·
500mW Power Dissipation
High Stability
Low Noise
Hemetic Package
D
B
A
Mechanical Data
·
·
·
·
·
Case: MicroMELF, Glass
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Cathode Band Only
Weight: 0.012 grams (approx.)
MicroMELF
Dim
A
B
C
Min
1.8
1.20
Max
2.0
1.25
1.35Æ Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Forward Voltage
(Note 1)
(Note 1)
P
d
R
qJA
V
F
@ T
A
= 25°C unless otherwise specified
Value
500
300
1.5
-65 to +175
Unit
mW
K/W
V
°C
Symbol
@ I
F
= 200mA
Operating and Storage Temperature Range
T
j,
T
STG
Notes:
1. Valid provided that electrodes are kept at ambient temperature at a distance of 8.0mm from case.
2. Tested with pulses, T
p
= 100ms.
DS30005 Rev. D-3
1 of 3
C
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