UBCW68G datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> UBCW68G

Preview

UBCW68G: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size40KB，2 Pages; ManufacturerDiodes Incorporated

Download Datasheet Parametric Compare View All

UBCW68G Overview

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

UBCW68G Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Maximum off time (toff)	400 ns
Maximum opening time (tons)	100 ns

UBCW68G Preview

SOT23 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 5 - MARCH 2001

PARTMARKING DETAILS –

BCW68F –

BCW68G –

BCW68H –

DF

DG

DH

BCW68FR –

BCW68GR –

BCW68HR –

7T

5T

7N

BCW68

C

B

E

COMPLEMENTARY TYPES – BCW66

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current(10ms)

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CES

V

CEO

V

EBO

I

CM

I

C

I

B

P

tot

T

j

:T

stg

VALUE

-60

-45

-5

-1000

-800

-100

330

-55 to +150

SOT23

UNIT

V

mA

mW

°C

TBA

BCW68

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

V

(BR)CES

-45

-60

-5

-20

-10

-20

-0.3

-0.7

V

I

CEO

=-10mA

IC=-10

µ

A

Emitter-Base Breakdown Voltage

Collector-Emitter

Cut-off Current

Emitter-Base Cut-Off Current

Collector-Emitter Saturation

Voltage

Base-Emitter Saturation Voltage

Static

Forward

Current

Transfer

BCW68F

V

(BR)EBO

I

CES

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

h

FE

h

FE

f

T

C

obo

C

ibo

N

V

nA

µ

A

nA

V

I

EBO

=-10

µ

A

V

CES

=-45V

V

CES

=-45V, T

amb

=150°C

V

EBO

=-4V

I

C

=-100mA, I

B

= -10mA

I

C

= -500mA, I

B

=-50mA*

I

C

=-500mA,I

B

=-50mA*

I

C

=-100mA, V

CE

=-1V*

I

C

=-500mA, V

CE

=-2V*

I

C

=-100mA, V

CE

=-1V*

I

C

=-500mA, V

CE

=-2V*

I

C

=-100mA, V

CE

=-1V*

I

C

=-500mA, V

CE

=-2V*

-2

100

35

160

60

250

100

170

250

BCW68G

250

400

BCW68H

350

630

Transition Frequency

MHz

I

C

=-20mA, V

CE

=-10V

f = 100MHz

V

CB

=-10V, f =1MHz

V

EB

=-0.5V, f =1MHz

I

C

= -0.2mA, V

CE

=- 5V

R

G

=1K

Ω,

f=1KH

∆

f=200Hz

Output Capacitance

Input Capacitance

Noise Figure

12

18

80

pF

dB

2

10

Switching times:

Turn-On Time

Turn-Off Time

t

on

t

off

100

400

ns

I

C

=-150mA

I

B1

=- I

B2

=-15mA

R

L

=150

Ω

Spice parameter data is available upon request for this device

*Measured under pulsed conditions.

TBA

More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

UBCW68G Related Products

	UBCW68G
Description	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Maker	Diodes Incorporated
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Maximum off time (toff)	400 ns
Maximum opening time (tons)	100 ns

Recommended Resources

Fast spot welding machine circuit using thyristor switch

Internal circuit principle of LB1419

Basic application standard application circuit diagram of the MAX736 series

Refrigerator air cooling power saving automatic controller circuit

Long delay switching circuit

Color TV remote control 41

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components