ZUMT617TC datasheet, PDF - EEWORLD Datasheet

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ZUMT617TC: DescriptionSmall Signal Bipolar Transistor, 1.5A I(C), 1-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size133KB，3 Pages; ManufacturerDiodes Incorporated

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ZUMT617TC Overview

Small Signal Bipolar Transistor, 1.5A I(C), 1-Element, NPN, Silicon

ZUMT617TC Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
Maximum collector current (IC)	1.5 A
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	180 MHz
Maximum off time (toff)	250 ns

ZUMT617TC Preview

Super323™

SOT323 NPN SILICON POWER

(SWITCHING) TRANSISTOR

ISSUE 1 - SEPTEMBER 1998

FEATURES

ZUMT617

500mW POWER DISSIPATION

CONT 1.5A

5A Peak Pulse Current

Excellent H

Characteristics Up To 5A (pulsed)

Extremely Low Equivalent On Resistance;

CE(sat)

APPLICATIONS

DC-DC converter boost functions

Motor drive functions

DEVICE TYPE

ZUMT617

COMPLEMENT

ZUMT717

PARTMARKING

T61

CE(sat)

135mΩ at 1.5A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current**

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C*

SYMBOL

CBO

CEO

EBO

tot

VALUE

1.5

200

385 †

500 ‡

-55 to +150

UNIT

Operating and Storage Temperature T

stg

Range

°C

† Recommended P

tot

calculated using FR4 measuring 10 x 8 x 0.6mm (still air).

‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4

size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.

ZUMT617

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector Emitter

Cut-Off Current

Collector-Emitter

Saturation Voltage

SYMBOL

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

CES

CE(sat)

16.5

150

205

930

865

200

300

250

200

420

450

390

300

150

180

250

MHz

MIN.

100

200

245

1100

TYP.

MAX.

UNIT

CONDITIONS.

= 100µA

= 10mA*

= 100µA

= 10V

= 4V

CES

= 10V

= 100mA, I

=10mA*

= 250mA, I

= 10mA*

= 500mA, I

=10mA*

= 1A, I

=10mA*

= 1.5A, I

=20mA*

= 1.5A, I

=20mA*

= 1.5A, V

= 2V*

= 10mA, V

= 2V*

= 100mA, V

= 2V*

= 500mA, V

=2V*

= 1A, V

=2 V*

= 3A, V

=2V*

=5A, V

= 2V*

= 50mA, V

= 10V

f= 100MHz

= 10V, f=1MHz

= 10V, I

= 1A

=100mA

Base-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

Static Forward

Current Transfer

Ratio

BE(sat)

BE(on)

Transition

Frequency

Output Capacitance

Turn-On Time

Turn-Off Time

obo

(on)

(off)

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤

ZUMT617

TYPICAL CHARACTERISTICS

0.4

+25°C

0.4

IC/IB=50

0.3

CE(sat)

- (V)

CE(sat)

- (V)

IC/IB=10

IC/IB=50

IC/IB=100

0.2

-55°C

+25°C

+100°C

+150°C

0.1

10m

100m

10m

100m

- Collector Current (A)

CE(sat)

v I

- Collector Current (A)

CE(sat)

v I

800

VCE=2V

IC/IB=50

1.0

- Typical Gain

600

BE(sat)

- (V)

+100°C

0.75

400

+25°C

0.5

-55°C

+25°C

+100°C

+150°C

200

-55°C

0.25

10m

100m

- Collector Current (A)

10m

100m

v I

- Collector Current (A)

BE(sat)

v I

1.0

0.8

- Collector Current (A)

BE(on)

- (V)

100ms

10ms

1ms

100us

0.6

0.4

0.2

10m

100m

- Collector Current (A)

-55°C

+25°C

+100°C

+150°C

100m

10m

100m

100

- Collector Emitter Voltage (V)

BE(on)

v I

Safe Operating Area

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