ZVN0117TA datasheet, PDF - EEWORLD Datasheet

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ZVN0117TA: DescriptionSmall Signal Field-Effect Transistor, 0.16A I(D), 170V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size47KB，1 Pages; ManufacturerDiodes Incorporated

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ZVN0117TA Overview

Small Signal Field-Effect Transistor, 0.16A I(D), 170V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZVN0117TA Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	IN-LINE, R-PSIP-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	170 V
Maximum drain current (ID)	0.16 A
Maximum drain-source on-resistance	23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

ZVN0117TA Preview

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 1 APRIL 94

FEATURES

* 170 Volt BV

DS

APPLICATIONS

* Telephone handsets

ZVN0117TA

D

G

S

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

DS

I

D

I

DM

V

GS

P

tot

T

j

:T

stg

E-Line

TO92 Compatible

VALUE

170

160

2

±

20

UNIT

V

mA

A

V

mW

°C

700

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

BV

DSS

I

GSS

I

DSS

I

D(on)

R

DS(on)

100

23

170

100

10

50

MAX.

UNIT CONDITIONS.

V

nA

µ

A

µ

A

Drain-Source Breakdown

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source

On-State Resistance (1)

I

D

=10

µ

A, V

GS

=0V

V

GS

=

±

15V, V

DS

=0V

V

DS

=170 V, V

GS

=0

V

DS

=140 V, V

GS

=0V,

T=50°C

(2)

V

DS

=3V, V

GS

=3.3V

V

GS

=3.3V,I

D

=100mA

V

GS

=3V,I

D

=30mA

mA

Ω

(1) Measured under pulsed conditions. Width=300

µ

s. Duty cycle

≤

2%

PAGE NO

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