ZVN0124DWP datasheet, PDF - EEWORLD Datasheet

ZVN0124DWP: DescriptionSmall Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.042 X 0.042 INCH, G17, DIE-2; CategoryDiscrete semiconductor The transistor; File Size32KB，1 Pages; ManufacturerDiodes Incorporated

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ZVN0124DWP Overview

Small Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.042 X 0.042 INCH, G17, DIE-2

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XUUC-N2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	240 V
Maximum drain-source on-resistance	16 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-XUUC-N2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON

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