ZVN4206ZTA datasheet, PDF - EEWORLD Datasheet

ZVN4206ZTA: DescriptionPower Field-Effect Transistor, 0.9A I(D), 60V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size37KB，1 Pages; ManufacturerDiodes Incorporated

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ZVN4206ZTA Overview

Power Field-Effect Transistor, 0.9A I(D), 60V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Maker	Diodes Incorporated
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.9 A
Maximum drain-source on-resistance	1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	8 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON

	ZVN4206ZTA
Description	Power Field-Effect Transistor, 0.9A I(D), 60V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Maker	Diodes Incorporated
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.9 A
Maximum drain-source on-resistance	1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	8 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON

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