A Product Line of
Diodes Incorporated
Green
ZX5T951G
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
Features
•
•
•
•
•
•
•
•
•
•
BV
CEO
> -60V
I
C
= -5.5A High Continuous Collector Current
I
CM
= -15A Peak Pulse Current
Low Saturation Voltage V
CE(sat)
< -70mV @ -1A
R
SAT
= 39mΩ for a Low Equivalent On-Resistance
h
FE
Specified Up to -10A for a High Gain Hold Up
Complementary NPN Type: ZX5T851G
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
Applications
•
•
•
•
•
DC-DC converters
MOSFET & IGBT gate drivers
Charging circuits
Power switches
Motor control
C
SOT223
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
ZX5T951GTA
ZX5T951GTC
Notes:
Marking
X5T951
X5T951
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
4,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
X5T
951
953
X5T951 = Product type Marking Code
ZX5T951G
Datasheet Number: DS33424 Rev. 3 - 2
1 of 7
www.diodes.com
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T951G
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-100
-60
-7
-5.5
-15
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
P
D
R
θ
JA
R
θ
JA
R
θ
JL
T
J,
T
STG
Symbol
Value
3.0
24
1.6
12.8
42
78
10.48
-55 to +150
Unit
W
mW /°C
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
≥
400
Unit
V
V
JEDEC Class
3A
C
5. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is surface mounted on 25mm x 25mm with 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZX5T951G
Datasheet Number: DS33424 Rev. 3 - 2
2 of 7
www.diodes.com
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T951G
Thermal Characteristics and Derating Information
V
CE(sat)
-I
C
Collector Current (A)
10
Limit
Max Power Dissipation (W)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25mmX25mm FR4
1oz Cu
52mmX52mm FR4
2oz Cu
1
DC
1s
100ms
10ms
1ms
100µs
100m
52mmX52mm FR4
2oz Cu
Single Pulse. T
amb
=25°C
10m
100m
-V
CE
Collector-Emitter Voltage (V)
1
10
100
20
40
60
80
100 120 140 160
Temperature (°C)
Safe Operating Area
Derating Curve
Single Pulse. T
amb
=25°C
Thermal Resistance (°C/W)
Max Power Dissipation (W)
40
30
52mmX52mm FR4
2oz Cu
100
52mmX52mm FR4
2oz Cu
D=0.5
20
D=0.2
Single Pulse
D=0.05
D=0.1
10
10
0
100µ
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
ZX5T951G
Datasheet Number: DS33424 Rev. 3 - 2
3 of 7
www.diodes.com
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T951G
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R
≤
1kΩ
I
EBO
h
FE
Min
-100
-100
-60
-7
-
-
-
100
100
45
10
-
-
-
-
-
-
-
-
-
-
Typ
-120
-120
-80
-8.1
<1
-
<1
-
<1
250
200
90
25
-15
-55
-90
-195
-1030
-920
48
120
39
370
Max
-
-
-
-
-20
-0.5
-20
-0.5
-10
-
300
-
-
-25
-70
-120
-250
-1150
-1020
-
-
-
-
Unit
V
V
V
V
nA
µA
nA
µA
nA
-
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Output Capacitance (Note 9)
Transition Frequency
Switching Time
Notes:
V
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
f
T
t
on
t
off
mV
mV
mV
pF
MHz
ns
Test Condition
I
C
= -100µA
I
C
= -1µA, RB
≤
1kΩ
I
C
= -10mA
I
E
= -100µA
V
CB
= -80V
V
CB
= -80V, T
A
= +100°C
V
CB
= -80V
V
CB
= -80V, T
A
= +100°C
V
EB
= -6V
I
C
= -10mA, V
CE
= -1V
I
C
= -2A, V
CE
= -1V
I
C
= -5A, V
CE
= -1V
I
C
= -10A, V
CE
= -1V
I
C
= -100mA, I
B
= -10mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -5A, I
B
= -500mA
I
C
= -5A, I
B
= -500mV
I
C
= -5A, V
CE
= -1V
V
CB
= -10V. f = 1MHz
V
CE
= -10V, I
C
= -100mA
f = 50MHz
V
CC
= -10V, I
C
= -1A
I
B1
= -I
B2
= -100mA
9. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
ZX5T951G
Datasheet Number: DS33424 Rev. 3 - 2
4 of 7
www.diodes.com
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T951G
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
Tamb=25°C
0.5
I
C
/I
B
=10
0.4
- V
CE(SAT)
(V)
- V
CE(SAT)
(V)
I
C
/I
B
=50
I
C
/I
B
=20
100m
0.3
0.2
0.1
0.0
1m
-55°C
100°C
25°C
10m
1m
10m
100m
1
I
C
/I
B
=10
- I
C
Collector Current (A)
10
V
CE(SAT)
v I
C
- I
C
Collector Current (A)
10m
100m
1
10
V
CE(SAT)
v I
C
1.4
1.2
100°C
V
CE
=1V
300
250
1.4
1.2
I
C
/I
B
=10
-55°C
25°C
0.8
0.6
0.4
0.2
0.0
1m
25°C
150
100
- V
BE(SAT)
(V)
1.0
200
Typical Gain (h
FE
)
Normalised Gain
1.0
0.8
0.6
0.4
1m
-55°C
50
100m
1
10
0
100°C
- I
C
Collector Current (A)
10m
h
FE
v I
C
- I
C
Collector Current (A)
10m
100m
1
10
V
BE(SAT)
v I
C
1.4
1.2
V
CE
=1V
-55°C
- V
BE(ON)
(V)
1.0
25°C
0.8
0.6
0.4
1m
10m
100m
100°C
- I
C
Collector Current (A)
1
10
V
BE(ON)
v I
C
ZX5T951G
Datasheet Number: DS33424 Rev. 3 - 2
5 of 7
www.diodes.com
January 2013
© Diodes Incorporated
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