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ZX5T951GTA

Description
Power Bipolar Transistor, 5.5A I(C), PNP, Plastic/Epoxy, 4 Pin, GREEN, SOT-223, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size495KB,7 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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ZX5T951GTA Overview

Power Bipolar Transistor, 5.5A I(C), PNP, Plastic/Epoxy, 4 Pin, GREEN, SOT-223, 4 PIN

ZX5T951GTA Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeSOT-223
package instructionGREEN, SOT-223, 4 PIN
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time15 weeks
Shell connectionCOLLECTOR
Maximum collector current (IC)5.5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz

ZX5T951GTA Preview

A Product Line of
Diodes Incorporated
Green
ZX5T951G
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
Features
BV
CEO
> -60V
I
C
= -5.5A High Continuous Collector Current
I
CM
= -15A Peak Pulse Current
Low Saturation Voltage V
CE(sat)
< -70mV @ -1A
R
SAT
= 39mΩ for a Low Equivalent On-Resistance
h
FE
Specified Up to -10A for a High Gain Hold Up
Complementary NPN Type: ZX5T851G
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
DC-DC Converters
MOSFET & IGBT Gate Drivers
Charging Circuits
Power Switches
Motor Control
C
SOT223
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
ZX5T951GTA
ZX5T951GTC
Notes:
Marking
X5T951
X5T951
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
4,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SOT223
X5T
951
591A
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
YWW
X5T 951 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T951G
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-100
-60
-7
-5.5
-15
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance Junction to Lead
Operating and Storage Temperature Range
(Note 5)
P
D
(Note 6)
(Note 5)
(Note 6)
(Note 7)
R
JA
R
JA
R
JL
T
J,
T
STG
Symbol
Value
3.0
24
1.6
12.8
42
78
10.48
-55 to +150
Unit
W
mW/°C
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as Note (5), except the device is surface mounted on 25mm x 25mm with 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T951G
Thermal Characteristics and Derating Information
V
CE(sat)
10
Limit
Max Power Dissipation (W)
-I
C
Collector Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25mmX25mm FR4
1oz Cu
52mmX52mm FR4
2oz Cu
1
DC
1s
100ms
10ms
Single Pulse. T
amb
=25°C
52mmX52mm FR4
2oz Cu
100m
1ms
100µs
10m
100m
1
10
100
20
40
60
80
100 120 140 160
-V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
Single Pulse. T
amb
=25°C
Thermal Resistance (°C/W)
40
30
52mmX52mm FR4
2oz Cu
Max Power Dissipation (W)
100
52mmX52mm FR4
2oz Cu
D=0.5
20
D=0.2
Single Pulse
D=0.05
D=0.1
10
10
0
100µ
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
3 of 7
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T951G
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter Cutoff Current
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R ≤ 1kΩ
I
EBO
h
FE
Min
-100
-100
-60
-7
-
-
-
100
100
45
10
-
-
-
-
-
-
-
-
-
-
Typ
-120
-120
-80
-8.1
<1
-
<1
-
<1
250
200
90
25
-15
-55
-90
-195
-1,030
-920
48
120
39
370
Max
-
-
-
-
-20
-0.5
-20
-0.5
-10
-
300
-
-
-25
-70
-120
-250
-1,150
-1,020
-
-
-
-
Unit
V
V
V
V
nA
µA
nA
µA
nA
Static Forward Current Transfer Ratio (Note 9)
-
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
f
T
t
on
t
off
mV
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Output Capacitance (Note 9)
Transition Frequency
Switching Time
Note:
mV
mV
pF
MHz
ns
Test Condition
I
C
= -100µA
I
C
= -1µA, RB ≤ 1kΩ
I
C
= -10mA
I
E
= -100µA
V
CB
= -80V
V
CB
= -80V, T
A
= +100°C
V
CB
= -80V
V
CB
= -80V, T
A
= +100°C
V
EB
= -6V
I
C
= -10mA, V
CE
= -1V
I
C
= -2A, V
CE
= -1V
I
C
= -5A, V
CE
= -1V
I
C
= -10A, V
CE
= -1V
I
C
= -100mA, I
B
= -10mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -5A, I
B
= -500mA
I
C
= -5A, I
B
= -500mV
I
C
= -5A, V
CE
= -1V
V
CB
= -10V. f = 1MHz
V
CE
= -10V, I
C
= -100mA
f = 50MHz
V
CC
= -10V, I
C
= -1A
I
B1
= -I
B2
= -100mA
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
4 of 7
www.diodes.com
March 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T951G
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
Tamb=25°C
0.5
I
C
/I
B
=10
0.4
- V
CE(SAT)
(V)
- V
CE(SAT)
(V)
I
C
/I
B
=50
I
C
/I
B
=20
100m
0.3
0.2
0.1
-55°C
100°C
25°C
I
C
/I
B
=10
10m
1m
10m
100m
1
10
0.0
1m
10m
100m
1
10
- I
C
Collector Current (A)
- I
C
Collector Current (A)
V
CE(SAT)
v I
C
300
1.4
1.2
100°C
V
CE
=1V
V
CE(SAT)
v I
C
1.4
I
C
/I
B
=10
250
Typical Gain (h
FE
)
1.2
-55°C
Normalised Gain
- V
BE(SAT)
(V)
1.0
0.8
0.6
25°C
200
150
100
1.0
0.8
0.6
0.4
1m
25°C
0.4
0.2
0.0
1m
-55°C
50
10m
100m
1
10
0
100°C
10m
100m
1
10
- I
C
Collector Current (A)
- I
C
Collector Current (A)
h
FE
v I
C
1.4
1.2
V
CE
=1V
-55°C
V
BE(SAT)
v I
C
- V
BE(ON)
(V)
1.0
25°C
0.8
0.6
0.4
1m
10m
100m
100°C
1
10
- I
C
Collector Current (A)
V
BE(ON)
v I
C
ZX5T951G
Datasheet Number: DS33424 Rev. 4 - 2
5 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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