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ZXMD63C03X

Description
1800mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MSOP-8
CategoryDiscrete semiconductor    The transistor   
File Size368KB,12 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

ZXMD63C03X Overview

1800mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MSOP-8

ZXMD63C03X Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys DescriptionDIODES INC. - ZXMD63C03X - MOSFET, DUAL, NP, MSOP8
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)1.8 A
Maximum drain-source on-resistance0.222 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON

ZXMD63C03X Preview

ZXMD63C03X
30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
N-CHANNEL: V
(BR)DSS
=
30V; R
DS(ON)
=
0.135 ; I
D
=
2.3A
P-CHANNEL: V
(BR)DSS
=-30V; R
DS(ON)
=0.185
;
I
D
=-2.0A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
MSOP8
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
N-channel
P-channel
APPLICATIONS
DC - DC converters
Power management functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMD63C03XTA
ZXMD63C03XTC
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
12 embossed
12 embossed
QUANTITY
PER REEL
1,000
4,000
Pin-out
DEVICE MARKING
ZXM63C03
Top view
ISSUE 2 - SEPTEMBER 2007
1
ZXMD63C03X
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current
(V
GS
=4.5V; T
A
=25°C)(b)(d)
(V
GS
=4.5V; T
A
=70°C)(b)(d)
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
P
D
T
j
:T
stg
2.3
1.8
14
1.5
14
0.87
6.9
1.04
8.3
1.25
10
-55 to +150
N-CHANNEL
30
20
-2.0
-1.6
-9.6
-1.4
-9.6
P-CHANNEL
-30
UNIT
V
V
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
SYMBOL
R
θJA
R
θJA
R
θJA
VALUE
143
100
120
UNIT
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 2 - SEPTEMBER 2007
2
ZXMD63C03X
N-CHANNEL CHARACTERISTICS
ISSUE 2 - SEPTEMBER 2007
3
ZXMD63C03X
P-CHANNEL CHARACTERISTICS
ISSUE 2 - SEPTEMBER 2007
4
ZXMD63C03X
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
1.0
30
1
100
V
μA
nA
V
0.135
Ω
0.200
Ω
1.9
S
I
D
=250μA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=
D
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
20V, V
DS
=0V
I =250μA, V
DS
= V
GS
V
GS
=10V, I
D
=1.7A
V
GS
=4.5V, I
D
=0.85A
V
DS
=10V,I
D
=0.85A
Static Drain-Source On-State Resistance (1) R
DS(on)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
t
rr
Q
rr
16.9
9.5
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.5
4.1
9.6
4.4
C
iss
C
oss
C
rss
290
70
20
g
fs
pF
pF
pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
ns
ns
ns
ns
8
1.2
2
nC
nC
nC
V
DS
=24V,V
GS
=10V,
I
D
=1.7A
(Refer to test circuit)
V
DD
=15V, I
D
=1.7A
R
G
=6.1Ω, R
D
=8.7Ω
(Refer to test circuit)
0.95
V
T
j
=25°C, I
S
=1.7A,
V
GS
=0V
T
j
=25°C, I
F
=1.7A,
di/dt= 100A/μs
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
ns
nC
NOTES:
(1) Measured under pulsed conditions. Width=300μs. Duty cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - SEPTEMBER 2007
5
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