ZXMN6A11DN8
60V SO8 Dual N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
60
R
DS(on)
( )
0.120 @ V
GS
= 10V
0.180 @ V
GS
= 4.5V
I
D
(A)
3.2
2.6
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
D1
D2
G1
S1
G2
S2
Applications
•
•
•
DC-DC converters
Power management functions
Motor control
S1
G1
D1
D1
D2
D2
Pin out - top view
Ordering information
Device
ZXMN6A11DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
S2
G2
Device marking
ZXMN
6A11D
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
ZXMN6A11DN8
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ V
GS
= 10V; T
amb
=25°C
(b)
@ V
GS
= 10V; T
amb
=70°C
(b)
@ V
GS
= 10V; T
amb
=25°C
(a)
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
(c)
Power dissipation at T
amb
=25°C
(a)(d)
Linear derating factor
Power dissipation at T
amb
=25°C
(a)(e)
Linear derating factor
Power dissipation at T
amb
=25°C
(b)(d)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
P
D
I
DM
I
S
I
SM
P
D
Symbol
V
DSS
V
GS
I
D
Limit
60
±20
3.2
2.6
2.5
13.7
3.1
13.7
1.25
10
1.8
14
2.1
17
-55 to +150
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Unit
V
V
A
Thermal resistance
Parameter
Junction to ambient
(a)(d)
Junction to ambient
(a)(e)
Junction to ambient
(b)(d)
Symbol
R
JA
R
JA
R
JA
Limit
100
70
60
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
ZXMN6A11DN8
Typical characteristics
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
ZXMN6A11DN8
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Static
Drain-source breakdown voltage V
(BR)DSS
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
(*)
Forward transconductance
(*)(‡)
Dynamic
(‡)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
(†) (‡)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
(*)
Reverse recovery time
(‡)
Reverse recovery charge
(‡)
V
SD
t
rr
Q
rr
0.85
21.5
20.5
0.95
V
ns
nC
T
j
=25°C, I
S
= 2.8A,
V
GS
=0V
T
j
=25°C, I
S
= 2.5A,
di/dt=100A/ s
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
1.95
3.5
8.2
4.6
3.0
5.7
1.25
0.86
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
= 15V, V
GS
= 5V
I
D
= 2.5A
V
DS
= 15V, V
GS
= 10V
I
D
= 2.5A
V
DD
= 30V, I
D
= 2.5A
R
G
≅
6.0 , V
GS
= 10V
C
iss
C
oss
C
rss
330
35.2
17.1
pF
pF
pF
V
DS
= 40V, V
GS
=0V
f=1MHz
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
4.9
1.0
0.120
0.180
S
60
1.0
100
V
A
nA
V
I
D
= 250 A, V
GS
=0V
V
DS
= 60V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
= 250 A, V
DS
=V
GS
V
GS
= 10V, I
D
= 2.5A
V
GS
= 4.5V, I
D
= 2A
V
DS
= 15V, I
D
= 2.5A
Symbol
Min.
Typ.
Max. Unit Conditions
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXMN6A11DN8
Typical characteristics
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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