Standard SRAM, 64KX4, 70ns, CMOS, SIDEBRAZED, DIP-28
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | IDT (Integrated Device Technology) |
| package instruction | SIDEBRAZED, DIP-28 |
| Reach Compliance Code | not_compliant |
| Maximum access time | 70 ns |
| I/O type | COMMON |
| JESD-30 code | R-XDIP-T28 |
| JESD-609 code | e0 |
| memory density | 262144 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of terminals | 28 |
| word count | 65536 words |
| character code | 64000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 64KX4 |
| Output characteristics | 3-STATE |
| Package body material | UNSPECIFIED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP28,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 225 |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 Class B |
| Maximum standby current | 0.002 A |
| Minimum standby current | 2 V |
| Maximum slew rate | 0.14 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
| 61298L70CB | 61298L25L28 | 61298L35L28 | 61298SA20LB | 61298L35TCB | |
|---|---|---|---|---|---|
| Description | Standard SRAM, 64KX4, 70ns, CMOS, SIDEBRAZED, DIP-28 | Standard SRAM, 64KX4, 25ns, CMOS, 0.300 INCH, LCC-28 | Standard SRAM, 64KX4, 35ns, CMOS, 0.300 INCH, LCC-28 | Standard SRAM, 64KX4, 20ns, CMOS, 0.300 INCH, LCC-28 | Standard SRAM, 64KX4, 35ns, CMOS, 0.300 INCH, SIDEBRAZED, DIP-28 |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
| package instruction | SIDEBRAZED, DIP-28 | 0.300 INCH, LCC-28 | 0.300 INCH, LCC-28 | 0.300 INCH, LCC-28 | 0.300 INCH, SIDEBRAZED, DIP-28 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| Maximum access time | 70 ns | 25 ns | 35 ns | 20 ns | 35 ns |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-XDIP-T28 | R-XQCC-N28 | R-XQCC-N28 | R-XQCC-N28 | R-XDIP-T28 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 |
| memory density | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 4 | 4 | 4 | 4 | 4 |
| Number of functions | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 28 | 28 | 28 | 28 | 28 |
| word count | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| character code | 64000 | 64000 | 64000 | 64000 | 64000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 70 °C | 70 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | - | - | -55 °C | -55 °C |
| organize | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| encapsulated code | DIP | QCCN | QCCN | QCCN | DIP |
| Encapsulate equivalent code | DIP28,.3 | LCC28,.35X.55 | LCC28,.35X.55 | LCC28,.35X.55 | DIP28,.3 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | 225 | 225 | 225 | NOT SPECIFIED | 225 |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum standby current | 0.002 A | 0.0005 A | 0.0005 A | 0.03 A | 0.0005 A |
| Minimum standby current | 2 V | 2 V | 2 V | 4.5 V | 2 V |
| Maximum slew rate | 0.14 mA | 0.13 mA | 0.13 mA | 0.14 mA | 0.14 mA |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | YES | YES | YES | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | COMMERCIAL | COMMERCIAL | MILITARY | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | NO LEAD | NO LEAD | NO LEAD | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm |
| Terminal location | DUAL | QUAD | QUAD | QUAD | DUAL |
| Maximum time at peak reflow temperature | 30 | 30 | 30 | NOT SPECIFIED | 30 |
| Filter level | MIL-STD-883 Class B | - | - | MIL-STD-883 Class B | MIL-STD-883 Class B |
| Objectid | - | 1156988461 | 1156988469 | 1164070039 | 1156988471 |
| ECCN code | - | EAR99 | EAR99 | 3A001.A.2.C | 3A001.A.2.C |
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