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Datasheet> All Categories > Discrete semiconductor> diode> E2000NC170
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E2000NC170

Description
Rectifier Diode, 1 Phase, 1 Element, 1568A, 1700V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size345KB，11 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

E2000NC170 Overview

Rectifier Diode, 1 Phase, 1 Element, 1568A, 1700V V(RRM), Silicon,

E2000NC170 Parametric

Parameter NameAttribute value
MakerIXYS
Reach Compliance Codecompliant
ECCN codeEAR99
applicationPOWER
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current16500 A
Number of components1
Phase1
Number of terminals2
Maximum output current1568 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1700 V
Maximum reverse recovery time2.4 µs
surface mountYES
Terminal formNO LEAD
Terminal locationEND

E2000NC170 Preview

Provisional Data
Absolute Maximum Ratings
VOLTAGE RATINGS
V
RRM
V
RSM
V
R(d.c.)


900
1568
988
576
2968
2466
15.0
16.5
1.13×10
1.36×10
Page 1 of 11
High Power Sonic FRD
Types E2000NC140 to E2000NC170
MAXIMUM
LIMITS
1400 - 1700
1500 - 1800
Repetitive peak reverse voltage, (note 1)
Maximum reverse d.c. voltage (note 1)
Non-repetitive peak reverse voltage, (note 1)


OTHER RATINGS
(note 6)
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)
I
F(d.c.)
I
FSM
I
FSM2
It
It
2
2
Mean forward current, T
sink
=55°C, (note 2)
Mean forward current. T
sink
=100°C, (note 2)
Mean forward current. T
sink
=100°C, (note 3)
D.C. forward current, T
sink
=25°C, (note 4)
Nominal RMS forward current, T
sink
=25°C, (note 2)
Peak non-repetitive surge t
p
=10ms, V
RM
=60%V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
RM
≤10V,
(note 5)
2
2


T
j op
T
stg
Operating temperature range
Storage temperature range
Provisional Data Sheet. Type E2000NC140 to E2000NC170 Issue 1
I t capacity for fusing t
p
=10ms, V
RM
=60%V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
RM
≤10V,
(note 5)
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 150°C T
j
initial.
6)
Current (I
F
) ratings have been calculated using V
T0
and r
T
(see page 2)

UNITS
V
V
V
WESTCODE
An
Date:- 1 Dec, 2005
Data Sheet Issue:- 1
IXYS
Company
MAXIMUM
LIMITS
UNITS
A
A
A
A
A
kA
kA
6
6
As
As
°C
°C
2
2
-40 to 150
-40 to 150
December, 2005
WESTCODE
An IXYS Company
Characteristics
PARAMETER
V
FM
V
T0
r
T
V
T01
r
T1
V
FRM
Maximum peak forward voltage
Threshold voltage
Slope resistance
Threshold voltage
Slope resistance
Maximum forward recovery voltage
High Power Sonic FRD Type E2000NC140 to E2000NC170
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
2.30
2.75
-
-
-
-
MAX. TEST CONDITIONS
(Note 1)
2.52
2.97
1.77
0.35
1.92
0.31
75
I
FM
=2000A
I
FM
=3150A
UNITS
V
V
mΩ
V
mΩ
V
Current range 1568A-4704A (Note 2)
Current range 2000A-6000A
di/dt = 3000A/µs


-
-
50
di/dt = 3000A/µs, T
j
=25°C
Rated V
RRM
-
50
1
-
-
Rated V
RRM
, T
j
=25°C
1670
935
1.0
1870
1120
-
-
600
-
218
2.4
-
300
-
-
185
0.02
Double side cooled
-
0.04
26
-
Single side cooled
-
(Note 4)
510
Page 2 of 11

December, 2005
I
RRM
Q
rr
Q
ra
I
rm
t
rr
Q
rr
Q
ra
I
rm
t
rr
R
thJK
F
W
t
Peak reverse current
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time, 50% Chord
Recovered charge
mA
µC
µC
A
µs
µC
µC
A
µs
K/W
kN
g
I
FM
=2000A, t
p
=1ms, di/dt=4000A/µs,
V
r
=1250V, 50% Chord (note 3)
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time, 50% Chord
Thermal resistance, junction to heatsink
Mounting force
Weight


Provisional Data Sheet. Type E2000NC140 to E2000NC170 Issue 1
Notes:-
1) Unless otherwise indicated T
j
=150°C.
2) V
T0
and r
T
were used to calculate the current ratings illustrated on page one.
3) Figures 3-7 were compiled using these conditions.
4) For clamp forces outside these limits, please consult factory.


-
-
-
-
-
19
-
I
FM
=2000A, t
p
=1000µs, di/dt=200A/µs,
V
r
=100V, 50% Chord
WESTCODE
An IXYS Company
Notes on Ratings and Characteristics
1.0 De-rating Factor
High Power Sonic FRD Type E2000NC140 to E2000NC170
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for T
j
below 25°C.
2.0 ABCD Constants
These constants (applicable only over current range of V
F
characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:
where I
F
= instantaneous forward current.
3.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
rm
chord as shown in Figure below.
(ii) Q
rr
is based on a 150µs integration time.
150
µ
s


0
I.e.
(iii)
Provisional Data Sheet. Type E2000NC140 to E2000NC170 Issue 1


Q
rr
=
∫
i
K Factor
=


rr
V
F
=
A
+
B
⋅
ln(
I
F
)
+
C
⋅
I
F
+
D
⋅
I
F
.
dt
t
1
t
2
Page 3 of 11

December, 2005
WESTCODE
An IXYS Company
4.0 Reverse Recovery Loss
High Power Sonic FRD Type E2000NC140 to E2000NC170
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
T
SINK
=
T
J
(
MAX
)
−
E
⋅
k
+
f
⋅
R
th
(
J
−
Hs
)
Where k = 0.2314 (°C/W)/s
[
]
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = Rated frequency in Hz at the original sink temperature.
R
th(J-Hs)
= d.c. thermal resistance (°C/W)
The total dissipation is now given by:
W
(
tot
)
=
W
(
original
)
+
E
⋅
f
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:


R
2
=
4
⋅
V
r
C
S
⋅
di dt
Where:
V
r
= Commutating source voltage
C
S
= Snubber capacitance
R = Snubber resistance
Provisional Data Sheet. Type E2000NC140 to E2000NC170 Issue 1


Page 4 of 11
NOTE 1 - Reverse Recovery Loss by Measurement


December, 2005

WESTCODE
An IXYS Company
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
High Power Sonic FRD Type E2000NC140 to E2000NC170
I
AV
Where V
T0
=
1.77
, r
T
=
0.35
mΩ
ff
= form factor (normally unity for fast diode applications)
W
AV
∆
T
=
R
th
∆
T
=
T
j
(
MAX
)
−
T
K
5.2 Calculation of V
F
using ABCD Coefficients
The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics. The resulting values for V
F
agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
-0.0797729
0.2885867
-4
-3


B
C
D
Provisional Data Sheet. Type E2000NC140 to E2000NC170 Issue 1


A
2.312826×10
4.330091×10
Page 5 of 11
The forward characteristic I
F
Vs V
F
, on page 6 is represented in two ways;
(i)
the well established V
T0
and r
T
tangent used for rating purposes and
(ii)
a set of constants A, B, C, and D forming the coefficients of the representative equation for V
F
in
terms of I
F
given below:
V
F
=
A
+
B
⋅
ln(
I
F
)
+
C
⋅
I
F
+
D
⋅
I
F


150°C Coefficients
0.21148109
0.09079419
-2.768936×10
0.03762817
-5

December, 2005
−
V
T
0
+
V
T
0
+
4
⋅
ff
2
⋅
r
T
⋅
W
AV
=
2
⋅
ff
2
⋅
r
T
2
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