High Speed IGBT
Short Circuit SOA Capability
IXSH 40N60B V
CES
=
=
IXST 40N60B I
C25
V
CE(sat)
=
t
fi typ
=
600V
75A
2.2V
100 ns
Preliminary data
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
J
= 125°C, R
G
= 2.7
W
Clamped inductive load, V
CC
= 0.8 V
CES
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125°C
R
G
= 22
W,
non repetitive
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
75
40
150
I
CM
= 80
@ 0.8 V
CES
10
280
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
ms
W
°C
°C
°C
• International standard packages
• Guaranteed Short Circuit SOA
capability
• Low V
CE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast Fall Time for switching speeds
up to 50 kHz
Applications
• AC and DC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power density
Features
G = Gate
E = Emitter
TAB = Collector
G
E
(TAB)
(TAB)
G
C
E
TO-247 AD (IXSH)
TO-268 (D3) ( IXST)
1.13/10 Nm/lb.in.
6
300
g
°C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
4
T
J
= 25°C
T
J
= 125°C
7
25
1
±100
2.2
V
V
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
mA,
V
GE
= 0 V
= 4 mA, V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98521B (7/00)
© 2000 IXYS All rights reserved
1-2
IXSH 40N60B
IXST 40N60B
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
16
23
3700
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
280
80
190
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
45
90
50
Inductive load, T
J
= 25°C
I
C
= I
C90
, V
GE
= 15 V, L = 100 µH
V
CE
= 0.8 V
CES
, R
G
= 2.7
W
50
110
120
1.8
55
Inductive load, T
J
= 125°C
I
C
= I
C90
, V
GE
= 15 V,
V
CE
= 0.8 V
CES
, R
G
= 2.7
W
170
1.7
190
180
2.0
200
200
2.6
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.45 K/W
(IXSH40N60B)
0.25
K/W
Dim. Millimeter
Min. Max.
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32 5.49
5.4
6.2
1.65 2.13
-
4.5
1.0
1.4
10.8 11.0
4.7
0.4
5.3
0.8
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
TO-247 AD (IXSH) Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
£
300
ms,
duty cycle
£
2 %
1.5 2.49
TO-268AA (D
3
PAK)
Dim.
Min. Recommended Footprint
A
A
1
A
2
b
b
2
C
D
E
E
1
e
H
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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