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W-IXGD40N30

Description
Insulated Gate Bipolar Transistor, 300V V(BR)CES, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size163KB,1 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

W-IXGD40N30 Overview

Insulated Gate Bipolar Transistor, 300V V(BR)CES, N-Channel

W-IXGD40N30 Parametric

Parameter NameAttribute value
MakerIXYS
package instructionUNCASED CHIP, R-XUUC-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW SATURATION VOLTAGE
Shell connectionCOLLECTOR
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
JESD-30 codeR-XUUC-N2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Transistor component materialsSILICON

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