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W0428SF250

Description
DIODE 428 A, 2500 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size308KB,8 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

W0428SF250 Overview

DIODE 428 A, 2500 V, SILICON, RECTIFIER DIODE, Rectifier Diode

W0428SF250 Parametric

Parameter NameAttribute value
MakerIXYS
package instructionO-MUPM-H1
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-MUPM-H1
Maximum non-repetitive peak forward current6050 A
Number of components1
Phase1
Number of terminals1
Maximum output current428 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2500 V
Maximum reverse recovery time19 µs
surface mountNO
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
WESTCODE
An
Date:- 16 Jun, 2006
Data Sheet Issue:- 1
IXYS
Company
Provisional Data
Rectifier Diode
Type W0428##250 to W0428##320
Development Type No.: WX171##250-320
Absolute Maximum Ratings
VOLTAGE RATINGS
V
RRM
V
RSM
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
2500-3200
2600-3300
UNITS
V
V
OTHER RATINGS
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)
I
F(RMS)
I
F(d.c.)
I
FSM
I
FSM2
It
It
T
j op
T
stg
2
2
MAXIMUM
LIMITS
428
380
271
425
809
675
5500
6050
151×10
183×10
3
3
UNITS
A
A
A
A
A
A
A
A
As
As
°C
°C
2
2
Maximum average forward current, T
case
=55°C, (note 2)
Maximum average forward current. T
case
=70°C, (note 2)
Maximum average forward current. T
case
=100°C, (note 2)
Nominal RMS forward current, T
case
=100°C, (note 2)
Nominal RMS forward current, T
case
=25°C, (note 2)
D.C. forward current, T
case
=25°C
Peak non-repetitive surge t
p
=10ms, V
rm
=60%V
RRM
, (note 3)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 3)
I t capacity for fusing t
p
=10ms, V
rm
=60%V
RRM
, (note 3)
I t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 3)
Operating temperature range
Storage temperature range
2
2
-40 to +150
-40 to +150
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Single phase; 50Hz, 180° half-sinewave.
3)
Half-sinewave, 150°C T
j
initial.
Provisional Data Sheet. Type W0428##250 to W0428##320 AD Issue 1
Page 1 of 8
June, 2006
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