PD - 97760A
IRLH6224PbF
HEXFET
®
Power MOSFET
V
DS
V
gs max
R
DS(on) max
(@V
GS
= 4.5V)
(@V
GS
= 2.5V)
20
± 12
3.0
4.0
44
80
V
V
mΩ
nC
PQFN 5X6 mm
Q
g typ
I
D
(@T
c(Bottom)
= 25°C)
i
A
Applications
•
Battery Protection Switch
Features and Benefits
Features
Low Thermal Resistance to PCB (< 2.4°C/W)
100% Rg tested
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLH6224TRPBF
IRLH6224TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
20
± 12
28
22
105
67
80
400
3.6
52
0.029
-55 to + 150
Units
V
g
g
c
hi
h
i
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
Notes
through
are on page 9
www.irf.com
1
03/30/12
IRLH6224PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Δ ΒV
DSS
/Δ T
J
R
DS(on)
V
GS(th)
Δ
V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
20
–––
–––
–––
0.5
–––
–––
–––
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
5.0
2.3
3.2
0.8
-4.2
–––
–––
–––
–––
–––
86
44
3.8
4.7
8.5
27
13
30
2.0
9.4
23
67
36
3710
1050
770
Conditions
–––
V
V
GS
= 0V, I
D
= 250μA
––– mV/°C Reference to 25°C, I
D
= 1.0mA
V
GS
= 4.5V, I
D
= 20A
3.0
mΩ
V
GS
= 2.5V, I
D
= 16A
4.0
1.1
V
V
DS
= V
GS
, I
D
= 50μA
––– mV/°C
V
DS
= 16V, V
GS
= 0V
1
μA
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
150
V
GS
= 12V
100
nA
-100
V
GS
= -12V
V
DS
= 10V, I
D
= 20A
–––
S
–––
nC V
GS
= 10V, V
DS
= 15V, I
D
= 20A
–––
V
DS
= 10V
–––
–––
V
GS
= 4.5V
nC
–––
I
D
= 20A
–––
–––
–––
nC V
DS
= 16V, V
GS
= 0V
e
e
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Ω
ns
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
R
G
=1.8Ω
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
Max.
125
20
Units
mJ
A
pF
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Typ. Max. Units
–––
–––
67
A
400
showing the
integral reverse
Conditions
MOSFET symbol
G
S
D
Ã
–––
–––
1.2
V
–––
38
57
ns
–––
82
125
nC
Time is dominated by parasitic Inductance
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 300A/μs
e
eÃ
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
f
Parameter
g
g
Typ.
–––
–––
–––
–––
Max.
2.4
34
35
22
Units
°C/W
2
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IRLH6224PbF
1000
TOP
VGS
10V
7.00V
4.50V
2.50V
2.30V
2.00V
1.75V
1.50V
1000
TOP
VGS
10V
7.00V
4.50V
2.50V
2.30V
2.00V
1.75V
1.50V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
1.50V
1
10
1.50V
≤60μs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
0.1
1
≤60μs
PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.6
ID = 20A
1.4
VGS = 10V
ID, Drain-to-Source Current(A)
100
TJ = 150°C
10
1.2
1.0
1
TJ = 25°C
VDS = 10V
≤60μs
PULSE WIDTH
0.8
0.1
0
1
2
3
4
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 20A
VDS= 16V
VDS= 10V
VDS= 4.0V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
1
10
VDS , Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRLH6224PbF
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
1000
100
TJ = 150°C
100
10msec
100μsec
TJ = 25°C
10
10
Limited by Package
i
1msec
1
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD , Source-to-Drain Voltage (V)
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
DC
0.1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
120
Fig 8.
Maximum Safe Operating Area
1.6
VGS(th), Gate threshold Voltage (V)
Limited By Package
100
ID, Drain Current (A)
i
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
ID = 50μA
80
60
40
20
0
25
50
75
100
125
150
TC, Case Temperature (°C)
ID = 250μA
ID = 1.0mA
ID = 1.0A
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
10
Fig 10.
Threshold Voltage vs. Temperature
Thermal Response ( ZthJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRLH6224PbF
Ω
RDS(on), Drain-to -Source On Resistance (m )
ID = 20A
6
EAS , Single Pulse Avalanche Energy (mJ)
8
500
ID
TOP
5.7A
9.3A
BOTTOM 20A
400
300
4
TJ = 125°C
200
2
TJ = 25°C
0
0
2
4
6
8
10
12
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
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