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IRLHM630

Description
Small PowIR MOSFETs
Categorysemiconductor    Discrete semiconductor   
File Size518KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRLHM630 Overview

Small PowIR MOSFETs

IRLHM630PbF
HEXFET
®
Power MOSFET
V
DSS
V
GS
R
DS(on)
max
(@ V
GS
= 4.5V)
(@ V
GS
= 2.5V)
Qg
(typical)
I
D
(@T
C (Bottom)
= 25°C)
30
±12
3.5
4.5
41
40
nC
A
PQFN 3.3 x 3.3 mm
V
V
m
 
 
Applications

Battery Operated DC Motor Inverter MOSFET

Secondary Side Synchronous Rectification MOSFET
Features
Low R
DSon
(< 3.5m)
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (< 1.0 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
IRLHM630TRPbF
IRLHM630TR2PBF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 12
21
17
40
40
160
2.7
37
0.022
-55 to + 150
W
W/°C
°C
A
 
Package Type
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility

Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Note
EOL notice # 259
 
 
Units
V
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Notes
through
are on page 9
1
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
September 25, 2015

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