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Datasheet> All Categories > Discrete semiconductor> The transistor> BC817DPN-TP
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BC817DPN-TP

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size985KB，5 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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BC817DPN-TP Overview

Small Signal Bipolar Transistor,

BC817DPN-TP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instruction,
Reach Compliance Codeunknown
Humidity sensitivity level1

BC817DPN-TP Preview

MCC
Micro Commercial Components
R
Micro Commercial Components
130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
BC817DPN
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS
Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
•
600 mW total power dissipation
NPN/PNP General
Purpose
Transistors
Maximum Ratings @ 25
O
C Unless Otherwise Specified
SYMBOL
PARAMETER
VALUE
UNIT
SOT23-6L
G
6
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
stg
Per device
P
tot
total power dissipation
(T
a
≤
25
°C)
600
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
(T
a
≤
25
°C)
junction temperature
storage temperature
50
45
5
500
1
200
370
-55~+150
-55~+150
V
V
V
mA
A
mA
mW
°C
°C
K
J
D
L
1
5
4
B
C
2
3
A
H
M
Equivalent Circuit
DIM
A
B
C
D
G
H
J
K
L
M
DIMENSIONS
INCHES
MIN
.012
.051
.106
.037
.074
.106
.002
.035
.012
.003
.122
.006
.051
.024
.008
MAX
.020
.070
.114
MM
MIN
0.30
1.30
2.70
0.95BSC
1.90BSC
2.70
0.05
0.90
0.30
0.08
MAX
0.50
1.80
2.90
3.10
0.15
1.30
0.60
0.22
NOTE
Marking:8017
www.mccsemi.com
Revision:
B
1
of
5
20
18/12/02
MCC
Micro Commercial Components
R
Electrical characteristics (T
A
=25
o
C, unless otherwise noted)
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
160
40
−
−
TYP.
−
−
−
−
−
−
−
MAX.
UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
collector-base cut-off current
emitter-base cut-off current
DC current gain
V
CB
= 20 V; I
E
= 0
V
CB
= 20 V; I
E
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 1 V; I
C
= 100 mA; note 1
V
CE
= 1 V; I
C
= 500 mA; note 1
collector-emitter saturation voltage I
C
= 500 mA; I
B
= 50 mA; note 1
base-emitter voltage
V
CE
= 1 V; I
C
= 500 mA;
notes 1 and 2
100
5
100
400
−
700
1.2
mV
V
nA
μA
nA
NPN transistor
C
c
f
T
collector capacitance
transition frequency
V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
V
CB
=
−10
V; I
E
= I
e
= 0; f = 1 MHz
V
CE
=
−5
V; I
C
=
−10
mA;
f = 100 MHz
−
100
5
−
−
−
pF
MHz
PNP transistor
C
c
f
T
Notes
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
2. V
BE
decreases by approximately
−2
mV/K with increasing temperature.
collector capacitance
transition frequency
−
80
9
−
−
−
pF
MHz
www.mccsemi.com
Revision:
B
2
of
5
20
18/12/02
MCC
Typical Characteristics(NPN
Transistor)
280
R
Micro Commercial Components
500
Static Characteristic
1mA
0.9mA
0.8mA
COMMON
EMITTER
T
a
=25
℃
0.7mA
0.6mA
0.5mA
h
FE
—— I
C
T
a
=100 C
o
(mA)
240
400
COLLECTOR CURRENT
DC CURRENT GAIN
200
h
FE
300
I
C
160
T
a
=25 C
o
120
0.4mA
0.3mA
0.2mA
200
80
40
I
B
=0.1mA
0
0
2
4
6
8
10
12
14
16
100
1
10
100
V
CE
= 1V
500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1.2
V
BEsat
—— I
C
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
0.4
V
CEsat
—— I
C
β=10
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
1.0
0.3
0.8
T
a
=25
℃
0.2
0.6
T
a
=100
℃
0.4
0.1
T
a
=100
℃
T
a
=25
℃
0.2
0.1
1
10
100
500
0.0
0.1
1
10
100
500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
500
I
C
——
V
BE
100
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
T
a
=25 C
C
ib
o
I
C
(mA)
50
100
COLLECTOR CURRENT
10
CAPACITANCE
T
a
=100 C
T
a
=25
℃
o
C
10
1
(pF)
C
ob
V
CE
=1V
0.1
0.3
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
5
10
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
300
f
T
——
I
C
COLLECTOR POWER DISSIPATION
P
c
(W)
0.4
P
c
—— T
a
(MHz)
0.3
f
T
TRANSITION FREQUENCY
100
0.2
0.1
V
CE
=5V
T
a
=25 C
10
1
10
60
0.0
0
25
50
75
100
125
150
o
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
www.mccsemi.com
Revision:
B
3
of
5
20
18/12/02
MCC
Typical Characteristics(PNP
Transistor)
-
280
(mA)
-
240
-
200
-
160
-
120
-
80
-
40
I
B
=-0.1mA
0
0
R
Micro Commercial Components
-
500
Static Characteristic
COMMON
-0.9mA EMITTER
T
a
=25
℃
-0.8mA
-0.7mA
-0.6mA
-0.5mA
-0.4mA
-0.3mA
-0.2mA
-1mA
h
FE
—— I
C
T
a
=100 C
o
-
400
h
FE
DC CURRENT GAIN
-
300
COLLECTOR CURRENT
I
C
T
a
=25 C
o
-
200
V
CE
= -1V
-
100
-
1
-
10
COLLECTOR CURRENT
I
C
-
100
(mA)
- 500
-
2
-
-
10
-
-
COLLECTOR-EMITTER VOLTAGE
-
12
-
14
V
CE
(V)
-
16
-1.2
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
β=10
-0.4
V
CEsat
——
I
C
β=10
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-1.0
-0.3
-0.8
T
a
=25
℃
-0.2
-0.6
T
a
=100
℃
-0.4
-0.1
T
a
=100
℃
T
a
=25
℃
-0.2
-0.1
-1
-10
-100
- 500
-0.0
-0.1
-1
-10
-100
- 500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
-1000
——
V
BE
100
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
T
a
=25 C
C
ib
o
I
C
(mA)
50
-100
COLLECTOR CURRENT
CAPACITANCE
T
a
=100 C
-10
o
C
10
T
a
=25
℃
(pF)
-1
C
ob
V
CE
=-1V
-0.1
-
0.3
-
0.4
-
0.5
-
0.7
-
0.8
-
0.6
BASE-EMITTER VOLTAGE
V
BE
(V)
-
0.9
-
1.0
1
0
-
5
REVERSE VOLTAGE
-
10
V
(V)
f
T
300
——
I
C
COLLECTOR POWER DISSIPATION
P
c
(W)
0.4
P
c
——
T
a
(MHz)
0.3
f
T
TRANSITION FREQUENCY
100
0.2
0.1
V
CE
=-5V
T
a
=25 C
10
o
-
1
-
10
COLLECTOR CURRENT
I
C
(mA)
- 60
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
Revision:
B
www.mccsemi.com
4
of
5
20
18/12/02
MCC
Micro Commercial Components
R
Ordering Information :
Device
Part Number-TP
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
Packing
Tape&Reel:
3Kpcs/Reel
***IMPORTANT NOTICE***
Micro Commercial Components Corp.
reserves the right to make changes without further notice to any product herein to
make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components
Corp .
does not assume any liability arising out of the application or use of any product described herein; neither does it
convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all
risks of such use and will agree to hold
Micro Commercial Components Corp .
and all the companies whose products are
represented on our website, harmless against all damages.
***LIFE SUPPORT***
MCC's products are not authorized for use as critical components in life support devices or systems without the express written
approval of Micro Commercial Components Corporation.
***CUSTOMER AWARENESS***
Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking
strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages
customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on
our web page cited
below.
Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine
parts, have full traceability, meet MCC's quality standards for handling and storage.
MCC will not provide any warranty
coverage or other assistance for parts bought from Unauthorized Sources.
MCC is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized
distributors.
www.mccsemi.com
Revision:
B
5
of
5
20
18/12/02
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BC817DPN-TP Related Products

BC817DPN-TP BC817DPN-TP-HF
Description Small Signal Bipolar Transistor, Small Signal Bipolar Transistor,
Is it Rohs certified? conform to conform to
Maker Micro Commercial Components (MCC) Micro Commercial Components (MCC)
Reach Compliance Code unknown compliant
Humidity sensitivity level 1 1

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