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FCPF190N60E-ND

Description
FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 mΩ
File Size631KB,10 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FCPF190N60E-ND Overview

FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 mΩ

FCP190N60E / FCPF190N60E — N-Channel SuperFET
®
II Easy-Drive MOSFET
December 2013
FCP190N60E / FCPF190N60E
N-Channel SuperFET
®
II Easy-Drive MOSFET
600 V, 20.6 A, 190 mΩ
Features
• 650 V @ T
J
= 150°C
• Typ. R
DS(on)
= 160 mΩ
• Ultra Low Gate Charge (Typ. Q
g
= 63 nC)
• Low Effective Output Capacitance (Typ. C
oss(eff.)
= 178 pF)
• 100% Avalanche Tested
• An Integrated Gate Resistor
• RoHS Compliant
Description
SuperFET
®
II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET easy-drive series offers slightly slower
rise and fall times compared to the SuperFET II MOSFET
series. Noted by the "E" part number suffix, this family helps
manage EMI issues and allows for easier design implementa-
tion. For faster switching in applications where switching losses
must be at an absolute minimum, please consider the Super-
FET II MOSFET series.
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
D
GD
S
TO-220
o
G
D
S
G
TO-220F
S
MOSFET Maximum Ratings
T
C
= 25
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- DC
- AC
C unless otherwise noted.
FCP190N60E FCPF190N60E
600
±20
(f > 1 Hz)
o
Parameter
Unit
V
V
V
±30
20.6
13.1
20.6*
13.1*
61.8*
400
4.0
2.1
100
20
208
39
0.31
-55 to +150
300
1.67
- Continuous (T
C
= 25 C)
- Continuous (T
C
=
- Pulsed
100
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
61.8
Single Pulsed Avalanche Energy
(T
C
= 25
o
C)
- Derate Above 25 C
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
C
C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
1
FCP190N60E
0.6
62.5
FCPF190N60E
3.2
62.5
Unit
o
C/W
©2011 Fairchild Semiconductor Corporation
FCP190N60E / FCPF190N60E Rev. C10
www.fairchildsemi.com
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