IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
D2
PA
K
BYV25FB-600
Enhanced ultrafast power diode
Rev. 02 — 7 March 2011
Product data sheet
1. Product profile
1.1 General description
Enhanced ultrafast power diode in a SOT404 (D2PAK) plastic package
1.2 Features and benefits
High thermal cycling performance
Low on-state losses
Low thermal resistance
Soft recovery characteristic
Surface-mountable package
1.3 Applications
Dual Mode (DCM and CCM) PFC
Power Factor Correction (PFC) for
Interleaved Topology
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak
reverse voltage
average forward
current
square-wave pulse;
δ
= 0.5 ;
T
mb
≤
126 °C; see
Figure 1;
see
Figure 2
I
F
= 5 A; T
j
= 25 °C;
see
Figure 5
I
F
= 5 A; T
j
= 150 °C;
see
Figure 5
Dynamic characteristics
t
rr
reverse recovery
time
I
F
= 1 A; V
R
= 30 V;
dI
F
/dt = 100 A/µs; T
j
= 25 °C;
see
Figure 6
-
17.5 35
ns
Conditions
Min
-
-
Typ
-
-
Max Unit
600
5
V
A
Static characteristics
V
F
forward voltage
-
-
1.3
1.1
1.9
1.7
V
V
NXP Semiconductors
BYV25FB-600
Enhanced ultrafast power diode
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
n.c.
K
A
K
not connected
cathode
[1]
anode
mounting base; cathode
2
1
3
mb
K
A
001aaa020
Simplified outline
Graphic symbol
SOT404 (D2PAK)
[1]
It is not possible to connect to pin 2 of the SOT404 package.
3. Ordering information
Table 3.
Ordering information
Package
Name
BYV25FB-600
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
DC
square-wave pulse;
δ
= 0.5 ;
T
mb
≤
126 °C; see
Figure 1;
see
Figure 2
square-wave pulse;
δ
= 0.5 ; t
p
= 25 µs;
T
mb
≤
126 °C
t
p
= 10 ms; sine-wave pulse;
T
j(init)
= 25 °C; see
Figure 3
t
p
= 8.3 ms; sine-wave pulse;
T
j(init)
= 25 °C; see
Figure 3
T
stg
T
j
storage temperature
junction temperature
Conditions
Min
-
-
-
-
Max
600
600
600
5
Unit
V
V
V
A
In accordance with the Absolute Maximum Rating System (IEC 60134).
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward
current
-
-
-
-40
-
10
60
66
150
150
A
A
A
°C
°C
BYV25FB-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 March 2011
2 of 12
NXP Semiconductors
BYV25FB-600
Enhanced ultrafast power diode
14
P
tot
(W)
12
10
8
6
4
0.1
0.5
003aaf430
10
P
tot
(W)
8
2.2
6
2.8
4.0
4
1.9
003aaf431
δ
=1
a = 1.57
0.2
2
2
0
0
2
4
6
I
F(AV)
(A)
8
0
0
1
2
3
4
5
I
F(AV)
(A)
V
o
= 1.50 V; R
s
= 0.041
Ω
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
V
o
= 1.50 V; R
s
= 0.041
Ω
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
003aaf446
10
3
I
FSM
(A)
10
2
P
t
p
t
10
1
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig 3.
Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values
BYV25FB-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 March 2011
3 of 12
NXP Semiconductors
BYV25FB-600
Enhanced ultrafast power diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see
Figure 4
in free air
[1]
Min
-
-
Typ
-
50
Max
2.5
-
Unit
K/W
K/W
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
10
Z
th(j-mb)
(K/W)
1
001aag913
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse width
BYV25FB-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 March 2011
4 of 12
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