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BYV410-600

Description
Rectifier Diode, 1 Phase, 2 Element, 20A, 600V V(RRM), Silicon, TO-220AB, PLASTIC, SC-46, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size268KB,12 Pages
ManufacturerWeEn Semiconductors
Environmental Compliance
Download Datasheet Parametric View All

BYV410-600 Overview

Rectifier Diode, 1 Phase, 2 Element, 20A, 600V V(RRM), Silicon, TO-220AB, PLASTIC, SC-46, 3 PIN

BYV410-600 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerWeEn Semiconductors
package instructionSC-46, 3 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
applicationULTRA FAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum non-repetitive peak forward current132 A
Number of components2
Phase1
Number of terminals3
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

BYV410-600 Preview

IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
TO
-22
0A
B
BYV410-600
Dual enhanced ultrafast power diode
Rev. 2 — 5 August 2011
Product data sheet
1. Product profile
1.1 General description
Dual enhanced ultrafast power diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
High thermal cycling performance
Low on state losses
Low thermal resistance
Soft recovery characteristic minimizes
power consuming oscillations
1.3 Applications
Dual mode (DCM and CCM) PFC
Power Factor Correction (PFC) for
Interleaved Topology
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
O(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average output current square-wave pulse;
δ
= 0.5 ;
T
mb
92 °C; both diodes
conducting;
see
Figure 1;
see
Figure 2
forward voltage
I
F
= 10 A; T
j
= 150 °C
I
F
= 10 A; T
j
= 25 °C;
see
Figure 4
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V;
dI
F
/dt = 100 A/µs; T
j
= 25 °C;
see
Figure 5
I
F
= 1 A; V
R
= 30 V;
dI
F
/dt = 100 A/µs
-
20
35
ns
Conditions
Min
-
-
Typ
-
-
Max
600
20
Unit
V
A
Static characteristics
V
F
-
-
1.3
1.4
1.9
2.1
V
V
Q
r
recovered charge
-
15
28
nC
NXP Semiconductors
BYV410-600
Dual enhanced ultrafast power diode
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
A1
K
A2
K
anode 1
cathode
anode 2
mounting base; cathode
mb
A1
K
sym125
Simplified outline
Graphic symbol
A2
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYV410-600
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
BYV410-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 5 August 2011
2 of 11
NXP Semiconductors
BYV410-600
Dual enhanced ultrafast power diode
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
DC
square-wave pulse;
δ
= 0.5 ;
T
mb
92 °C; both diodes conducting;
see
Figure 1;
see
Figure 2
δ
= 0.5 ; t
p
= 25 µs; T
mb
108 °C;
per diode
t
p
= 8.3 ms; sine-wave pulse;
T
j(init)
= 25 °C; per diode
t
p
= 10 ms; sine-wave pulse;
T
j(init)
= 25 °C; per diode
T
stg
T
j
storage temperature
junction temperature
Conditions
Min
-
-
-
-
Max
600
600
600
20
Unit
V
V
V
A
In accordance with the Absolute Maximum Rating System (IEC 60134).
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward
current
-
-
-
-40
-
20
132
120
150
150
A
A
A
°C
°C
24
P
tot
(W)
18
0.2
0.1
12
0.5
003aad262
24
P
tot
(W)
003aad263
δ=1
a = 180°
18
90
60
30
12
120
6
6
0
0
5
10
I
F(AV)
(A)
15
0
0
5
I
F(AV)
(A)
10
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYV410-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 5 August 2011
3 of 11
NXP Semiconductors
BYV410-600
Dual enhanced ultrafast power diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
Conditions
with heatsink compound;
per diode; see
Figure 3
with heatsink compound;
both diodes conducting
R
th(j-a)
thermal resistance from junction
to ambient
Min
-
-
-
Typ
-
-
60
Max
2.4
1.6
-
Unit
K/W
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
001aag912
10
−1
P
δ
=
t
p
T
10
−2
t
p
T
t
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 3.
Transient thermal impedance from junction to mounting base per diode as a function of pulse width
BYV410-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 5 August 2011
4 of 11
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