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FDP5N50NZ

Description
4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size251KB,14 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FDP5N50NZ Overview

4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

FDP5N50NZ Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-220
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging codeTO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)160 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)4.5 A
Maximum drain current (ID)4.5 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)78 W
Maximum pulsed drain current (IDM)18 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PCN# : P315A
Issue Date : Feb. 04, 2013
DESIGN/PROCESS CHANGE NOTIFICATION
This is to inform you that a change is being made to the products listed below.
Unless otherwise indicated in the details of this notification, the identified change will have no impact on product
quality, reliability, electrical, visual or mechanical performance and affected products will remain fully compliant to all
published specifications. Products incorporating this change may be shipped interchangeably with existing unchanged
products.
This change is planned to take effect in 90 calendar days from the date of this notification. Please work with your local
Fairchild Sales Representative to manage your inventory of unchanged product if your evaluation of this change will
require more than 90 calendar days.
Please contact your local Customer Quality Engineer within 30 days of receipt of this notification if you require any
additional data or samples. Alternatively, you may send an email request for data, samples or other information to
PCNSupport@fairchildsemi.com.
Implementation of change:
Expected First Shipment Date for Changed Product : May. 05, 2013
Expected First Date Code of Changed Product :1327
Description of Change (From) :
5/6-in wafer fabrication line at Fairchild Semiconductor Bucheon Korea.
Description of Change (To) :
8-in wafer fabrication line at Fairchild Semiconductor Bucheon Korea.
Reason for Change:
Fairchild Semiconductor is increasing wafer fabrication capacity by qualifying an 8-in wafer fabrication line at Fairchild
Semiconductor Bucheon Korea. Quality and reliability remain at the highest standards already demonstrated within
Fairchild's existing products. The reliability qualification results used to qualify the 8-in wafer fabrication line are
summarized below. The specific groups of products/MOSFET technologies are listed in the affected FSIDs list. Design,
die size and layout of the affected products will remain unchanged. There are no changes in the datasheet or electrical
performance.
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