FJZ945
FJZ945
Audio Frequency Amplifier & High
Frequency OSC.
• Complement to FJZ733
• Collector-Base Voltage : V
CBO
=60V
• High Current Gain Bandwidth Product : f
T
=300MHz (Typ.)
1
3
2
SOT-623F
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
60
50
5
150
100
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=6V, I
C
=1.0mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.5mA
f=1KHz, R
S
=500Ω
40
0.15
300
2.5
4.0
Min.
60
50
5
0.1
0.1
700
0.3
V
MHz
pF
dB
Typ.
Max.
Units
V
V
V
µA
µA
Thermal Characteristics
T
C
=25°C unless otherwise noted
Symbol
R
θJA
Parameter
Thermal Resistance, Junction to Ambient
Max.
1250
Units
°C/W
h
FE
Classification & Marking
Classification
h
FE
Marking
R
40 ~ 80
C2
O
70 ~ 140
C3
Marking
Y
120 ~ 240
C1
G
200 ~ 400
C4
L
350 ~ 700
C5
C1
©2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003
FJZ945
Typical Characteristics
100
I
B
= 400
µ
A
I
C
[mA], COLLECTOR CURRENT
I
B
= 350
µ
A
80
100
V
CE
=6V
I
B
= 300
µ
A
I
B
= 250
µ
A
60
I
C
[mA], COLLECTOR CURRENT
80
0
0
I
B
= 200
µ
A
40
60
125 C
25 C
0
-25 C
I
B
= 150
µ
A
I
B
= 100
µ
A
40
20
I
B
= 50
µ
A
0
20
0
2
4
6
8
10
12
14
16
18
20
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Transfer Characteristic
Ta=125 C
0
V
BE
(sat)[V], SATURATION VOLTAGE
V
CE
=6V
I
C
=10I
B
1
0
h
FE
, DC CURRENT GAIN
Ta=-25 C
Ta=25 C
100
0
Ta=-25 C
0
Ta=25 C
0
Ta=125 C
0
10
1
10
100
1000
0.1
1E-3
0.01
0.1
1
I
C
[mA], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. Base-Emitter Saturation Voltage
1
100
I
C
=10I
B
V
CE
(sat)[V], SATURATION VOLTAGE
I
E
= 0
f = 1MHz
C
ob
[pF], CAPACITANCE
Ta=125 C
0
10
0.1
Ta=25 C
Ta=-25 C
0
0
1
0.01
1E-3
0.1
0.01
0.1
1
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Output Capacitance
©2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003
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As used herein:
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or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2003 Fairchild Semiconductor Corporation
Rev. I3
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