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KFM5616Q1A-DEB50

Description
Flash, 16MX16, 76ns, PBGA67, 7 X 9 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-67
Categorystorage    storage   
File Size1MB,113 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
Download Datasheet Parametric View All

KFM5616Q1A-DEB50 Overview

Flash, 16MX16, 76ns, PBGA67, 7 X 9 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-67

KFM5616Q1A-DEB50 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSAMSUNG
Parts packaging codeBGA
package instructionVFBGA, BGA67,8X10,32
Contacts67
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time76 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B67
JESD-609 codee1
length9 mm
memory density268435456 bit
Memory IC TypeFLASH
memory width16
Humidity sensitivity level2
Number of functions1
Number of departments/size512
Number of terminals67
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA67,8X10,32
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
page size512 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Programming voltage1.8 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1 mm
Department size32K
Maximum standby current0.00005 A
Maximum slew rate0.04 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
switch bitYES
typeSLC NAND TYPE
width7 mm

KFM5616Q1A-DEB50 Preview

MuxOneNAND256(KFM5616Q1A-DEB5)
FLASH MEMORY
MuxOneNAND
TM
Specification
Density
256Mb
Part No.
KFM5616Q1A-DEB5
V
CC
(core & IO)
1.8V(1.7V~1.95V)
Temperature
Extended
PKG
67FBGA(LF)
Version: Ver. 1.2
Date: Dec. 23, 2005
1
MuxOneNAND256(KFM5616Q1A-DEB5)
FLASH MEMORY
1.0
INTRODUCTION
This specification contains information about the Samsung Electronics Company MuxOneNAND
‚ Flash memory product family.
Section 1.0 includes a general overview, revision history, and product ordering information.
Section 2.0 describes the MuxOneNAND device. Section 3.0 provides information about device operation. Electrical specifications
and timing waveforms are in Sections 4.0 though 6.0. Section 7.0 provides additional application and technical notes pertaining to
use of the MuxOneNAND. Package dimensions are found in Section 8.0
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
MuxOneNAND
‚ is a trademark of Samsung Electronics Company, Ltd. Other names and brands may be claimed as the property of
their rightful owners.
Copyright
©
2005, Samsung Electronics Company, Ltd
2
MuxOneNAND256(KFM5616Q1A-DEB5)
FLASH MEMORY
1.1
Revision History
Document Title
MuxOneNAND
Revision History
Revision No. History
0.0
1.0
1. Initial issue.
1. Corrected the errata
2. Added Data Protection flow chart.
3. Removed Cache Read Operation.
4. Added additional information on command register.
5. Revised Interrupt status register information.
6. Added INT pin schematic.
7. Changed tPGM1 to 205 from 320us, tPGM2 to 220 from 350us.
8. Revised AC/DC parameters
9. Revised ECC Bypass Description
10. Revised Reset Parameters and Timing Diagrams.
Draft Date
Feb. 27, 2005
May. 17, 2005
Remark
Preliminary
Final
1.1
1. Corrected the errata
2. Revised Invalid Block Table Creation Flow Chart.
3. Revised Multi Block Erase Description.
4. Revised Device Bus Operations.
5. Revised Reset Mode Operation.
Aug 11, 2005
Final
1.2
1. Corrected the errata.
Dec. 23, 2005
2. Chapter 2.8.17 : Add more explanation about cases according to BSC
setting.
3. Chapter 5.7 : Modified a parameter name from ’WE Pulse Width’ to ’WE
Pulse Width Low’.
4. Chapter 6.8 : Corrected ’Block Erase Operation Timing’.
5. Chpater 7.1.1 & 7.1.2 : Modified description and pin connection.
Final
3
MuxOneNAND256(KFM5616Q1A-DEB5)
FLASH MEMORY
1.2
Flash Product Type Selector
Samsung offers a variety of Flash solutions including NAND Flash, MuxOneNAND
and NOR Flash. Samsung offers Flash products
both component and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia.
To determine which Samsung Flash product solution is best for your application, refer the product selector chart.
Application Requires
Fast Random Read
Fast Sequential Read
Fast Write/Program
Multi Block Erase
Erase Suspend/Resume
Copyback
Lock/Unlock/Lock-Tight
ECC
Scalability
Samsung Flash Products
NAND
MuxOneNAND
(Max 64 Blocks)
(EDC)
External (Hardware/Software)
(ECC)
Internal
X
NOR
1.3
Ordering Information
K F M 56 1 6 Q 1 A - D E B 5
Speed
5 : 54MHz
6 : 66MHz
Product Line desinator
B : Include Bad Block
D : Daisy Sample
Operating Temperature Range
E = Extended Temp. (-30
°C
to 85
°C)
Package
D : FBGA(Lead Free)
Version
2nd Generation
Page Architecture
1 : 1KB Page
Samsung
MuxOneNAND Mem-
Device Type
M : Single Chip
Density
56 : 256Mb
Organization
x16 Organization
Operating Voltage Range
Q : 1.8V(1.7 V to 1.95V)
4
MuxOneNAND256(KFM5616Q1A-DEB5)
FLASH MEMORY
1.4
Architectural Benefits
MuxOneNAND is a highly integrated non-volatile memory solution based around a NAND Flash memory array.
The chip integrates system features including:
A BootRAM and bootloader
Two independent bi-directional 1KB DataRAM buffers
A High-Speed x16 Host Interface
On-chip Error Correction
On-chip NOR interface controller
This on-chip integration enables system designers to reduce external system logic and use high-density NAND Flash in applications
that would otherwise have to use more NOR components.
MuxOneNAND takes advantage of the higher performance NAND program time, low power, and high density and combines it with
the synchronous read performance of NOR. The NOR Flash host interface makes MuxOneNAND an ideal solution for applications
like G3 Smart Phones, Camera Phones, and mobile applications that have large, advanced multimedia applications and operating
systems, but lack a NAND controller.
When integrated into a Samsung Multi-Chip-Package with Samsung Mobile DDR SDRAM, designers can complete a high-perfor-
mance, small footprint solution.
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
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