V23990-P580-*4*-PM
flow1
Features
●
3~rectifier, optional BRC, Inverter, NTC
●
Very compact housing, easy to route
●
IGBT! / EmCon4 technology for low saturation losses
and improved EMC behaviour
12mm housing
Solder pins
17mm housing
Solder pins
17mm housing
Pressfit pins
1200V/35A
flow1 housing
Target Applications
Schematic
●
Industrial drives
●
Embedded drives
Types
●
V23990-P580-A41-PM
●
V23990-P580-A41Y-PM With pressfit pins
●
V23990-P580-A418-PM
●
V23990-P580-C41-PM
●
V23990-P580-C41Y-PM With pressfit pins
Maximum Ratings
C,
T
j
=25° unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
It
P
tot
T
j
max
2
1600
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
33
47
250
C
T
j
=25°
310
C
T
h
=80°
T
c
=80°
C
37
60
150
V
A
A
A
2
s
W
°
C
t
p
=10ms
50Hz half sine wave
T
j
=T
j
max
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
VCE
≤
1200V, Tj
≤
Top max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
1200
32
42
105
105
79
120
±20
10
800
175
V
A
A
A
W
V
µs
V
°
C
copyright Vincotech
1
Revision: 2
V23990-P580-*4*-PM
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
C
T
h
=80°
C
T
c
=80°
T
h
=80°
C
C
T
c
=80°
1200
34
44
70
61
93
175
V
A
A
W
°
C
Brake Transistor
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
V
CE
I
C
I
Cpuls
T
j
=T
j
max
t
p
limited by T
j
max
VCE
≤
1200V, Tj
≤
Top max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
1200
25
31
75
50
62
94
±20
10
800
175
V
A
A
A
W
V
µs
V
°
C
Brake Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
1200
14
19
20
29
44
175
V
A
A
W
°
C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
mm
mm
copyright Vincotech
2
Revision: 2
V23990-P580-*4*-PM
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
F
V
to
r
t
I
r
Thermal grease
thickness≤50um
λ
= 1 W/mK
1500
30
30
30
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=150°
C
0,8
1,16
1,13
0,90
0,78
8
11
1,6
V
V
20
2
m
mA
Thermal resistance chip to heatsink per chip
R
thJH
1,89
K/W
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
f=1MHz
C
oss
Q
Gate
Vcc=960V
Thermal grease
thickness≤50um
λ
= 1 W/mK
±15
35
Tj=25°
C
0
25
Tj=25°
C
155
270
nC
Rgoff=16
Rgon=16
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
V
CE
=V
GE
15
0
20
1200
0
0,0012
35
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
5
1,6
5,8
1,95
2,39
6,5
2,3
0,5
300
V
V
mA
nA
-
92
92
18
23
213
274
75
105
1,62
2,49
1,81
2,82
ns
±15
600
35
mWs
1950
pF
Thermal resistance chip to heatsink per chip
R
thJH
1,20
K/W
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
35
Rgon=16
1200
35
Erec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1
1,83
1,80
69
79
150
277
3,93
7,47
4100
2080
1,69
3,31
2,2
V
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
1,55
K/W
copyright Vincotech
3
Revision: 2
V23990-P580-*4*-PM
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Brake Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
960
25
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=32
Rgon=32
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
V
CE
=V
GE
15
0
20
1200
0
0,00085
25
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
5
1,6
5,8
1,86
2,31
6,5
2,2
0,005
200
V
V
mA
nA
-
127
129
36
42
232
276
74
112
1,81
2,42
1,37
2,19
ns
±15
1200
25
mWs
1430
115
85
120
nC
pF
Thermal resistance chip to heatsink per chip
R
thJH
1,53
K/W
Brake Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
10
1200
Rgon=32
Rgon=32
±15
600
25
E
rec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1,35
1,85
1,76
2,05
2,7
V
µA
A
ns
µC
A/µs
mWs
10
12
396
624
1,55
3,03
36
32
0,63
1,30
Thermal resistance chip to heatsink per chip
R
thJH
3,28
K/W
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. ±3%
R
∆R/R
P
T=25°
C
T=25°
C
T=25°
C
T=25°
C
T=25°
C
T=25°
C
-5
200
2
3950
3998
B
22000
5
%
mW
mW/K
K
K
copyright Vincotech
4
Revision: 2
V23990-P580-*4*-PM
Output Inverter
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
100
I
C
(A)
Output inverter IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
100
I
C
(A)
Output inverter IGBT
80
80
60
60
40
40
20
20
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
µs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
µs
150
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
35
I
C
(A)
Output inverter IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
60
I
F
(A)
Output inverter FWD
30
50
25
40
20
30
15
T
j
= T
jmax
-25°
C
10
20
T
j
= T
jmax
-25°
C
T
j
= 25°
C
5
10
T
j
= 25°
C
0
0
2
4
6
8
10
V
GE
(V)
12
0,0
0,5
1,0
1,5
2,0
2,5
V
F
(V)
3,0
0
At
t
p
=
V
CE
=
250
10
µs
V
At
t
p
=
250
µs
copyright Vincotech
5
Revision: 2
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