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MIMMG200DR060B

Description
Insulated Gate Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size3MB,5 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet View All

MIMMG200DR060B Overview

Insulated Gate Bipolar Transistor

MIMMG200DR060B
600V 200A IGBT Module
RoHS Compliant
FEATURES
·
Ultra Low Loss
·
High Ruggedness
·
High Short Circuit Capability
·
Positive Temperature Coefficient
·
With Fast Free-Wheeling Diodes
APPLICATIONS
·
Invertor
·
Convertor
·
Welder
·
SMPS and UPS
·
Induction Heating
GD Series Module
ABSOLUTE MAXIMUM RATINGS
Symbol
IGBT
V
CES
V
GES
I
C
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
T
C
=25°C
T
C
=80°C
T
C
=25°C, t
p
=1ms
T
C
=80°C, t
p
=1ms
Parameter
T
C
=25°C unless otherwise specified
Test Conditions
Values
Unit
600
±20
300
210
600
420
1100
-40 to +150
-40 to +125
AC, t=1min
3000
V
V
A
A
A
A
W
°C
°C
V
I
Cpuls
P
tot
T
J
T
STG
V
isol
Pulsed Collector Current
Power Dissipation Per IGBT
Junction Temperature Range
Storage Temperature Range
Insulation Test Voltage
Free-Wheeling Diode
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge
Forward Current
T
J
=45°C, t=10ms, Sine
T
J
=45°C, t=8.3ms, Sine
T
C
=25°C
T
C
=80°C
600
250
170
250
1000
1090
V
A
A
A
A
A
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