FMC12N50ES datasheet, PDF - EEWORLD Datasheet

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FMC12N50ES: DescriptionPower Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN; CategoryDiscrete semiconductor The transistor; File Size562KB，5 Pages; ManufacturerFuji Electric Co., Ltd.

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FMC12N50ES Overview

Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN

FMC12N50ES Parametric

Parameter Name	Attribute value
Maker	Fuji Electric Co., Ltd.
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
Other features	LOW NOISE
Avalanche Energy Efficiency Rating (Eas)	460.8 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	180 W
Maximum pulsed drain current (IDM)	48 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

FMC12N50ES Preview

FMC12N50ES

Super FAP-E

series

Features

Maintains both low power loss and low noise

Lower R

(on) characteristic

More controllable switching dv/dt by gate resistance

Smaller V

ringing waveform during switching

Narrow band of the gate threshold voltage (3.7±0.5V)

High avalanche durability

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

Outline Drawings [mm]

T-Pack (S)

Equivalent circuit schematic

Drain(D)

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DC converters

Gate(G)

Source(S)

Maximum Ratings and Characteristics

Absolute Maximum Ratings at Tc=25°C (unless otherwise speciﬁed)

Description

Drain-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Gate-Source Voltage

Repetitive and Non-Repetitive Maximum Avalanche Current

Non-Repetitive Maximum Avalanche Energy

Repetitive Maximum Avalanche Energy

Peak Diode Recovery dV/dt

Peak Diode Recovery -di/dt

Maximum Power Dissipation

Operating and Storage Temperature range

Symbol

DSX

dV/dt

-di/dt

stg

Characteristics

500

±12

±48

±30

460.8

18.0

6.3

100

1.67

180

150

-55 to + 150

Unit

kV/µs

A/µs

°C

Remarks

= -30V

Note*1

Note*2

Note*3

Note*4

Note*5

Ta=25°C

Tc=25°C

Electrical Characteristics at Tc=25°C (unless otherwise speciﬁed)

Description

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Drain-Source On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Time

Turn-Off Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate-Drain Crossover Charge

Avalanche Capability

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

Symbol

DSS

(th)

DSS

GSS

(on)

Ciss

Coss

Crss

td(on)

td(off)

trr

Qrr

Conditions

=250µA, V

=0V

=250µA, V

=500V, V

=0V

=400V, V

=0V

=±30V, V

=0V

=6A, V

=10V

=6A, V

=25V

=0V

f=1MHz

=300V

=10V

=6A

=15Ω

=250V

=12A

=10V

L=2.44mH, T

=25°C

=12A, V

=0V, T

=25°C

=12A, V

=0V

-di/dt=100A/µs, Tch=25°C

min.

500

3.2

4.5

typ.

3.7

0.427

1400

160

11.5

0.86

0.37

5.0

max.

4.2

250

100

0.50

2100

240

17.5

46.5

124.5

1.30

Unit

µA

Ω

=25°C

=125°C

µs

µC

Thermal Characteristics

Description

Thermal resistance

Symbol

Rth (ch-c)

Rth (ch-a)

Test Conditions

Channel to Case

Channel to Ambient

min.

typ.

max.

0.690

75.0

Unit

°C/W

Note *1 : Tch≤150°C.

Note *2 : Stating Tch=25°C, I

=5A, L=33.8mH, Vcc=50V, R

=50Ω.

limited by maximum channel temperature and avalanche current.

See to 'Avalanche Energy' graph.

Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.

See to the 'Transient Themal impeadance' graph.

Note *4 : I

≤-I

, -di/dt=100A/μs, Vcc≤BV

DSS

, Tch≤150°C.

Note *5 : I

≤-I

, dv/dt=6.3kV/μs, Vcc≤BV

DSS

, Tch≤150°C.

FMC12N50ES

Allowable Power Dissipation

PD=f(Tc)

Safe Operating Area

=f(V

):Duty=0(Single pulse),Tc=25

FUJI POWER MOSFET

200

180

160

140

120

PD [W]

100

ID [A]

100

Tc [

100

125

150

1ms

-1

Power loss waveform :

Square waveform

-2

-1

VDS [V]

Typical Output Characteristics

ID=f(VDS):80

s pulse test,Tch=25

100

Typical Transfer Characteristic

ID=f(VGS):80

s pulse test,VDS=25V,Tch=25

ID[A]

ID [A]

0.1

VDS [V]

VGS[V]

100

Typical Transconductance

gfs=f(ID):80

s pulse test,VDS=25V,Tch=25

0.9

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80

s pulse test,Tch=25

VGS=6.0V

6.5V

0.8

RDS(on) [

]

0.7

8V 10V

20V

gfs [S]

0.6

0.5

0.4

0.1

ID [A]

100

0.3

ID [A]

FMC12N50ES

Drain-Source On-state Resistance

RDS(on)=f(Tch):ID=6A,VGS=10V

Gate Threshold Voltage vs. Tch

VGS(th)=f(Tch):VDS=VGS,ID=250

FUJI POWER MOSFET

2.0

1.8

1.6

1.4

RDS(on) [

]

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-50

-25

Tch [

100

125

150

max.

typ.

VGS(th) [V]

-50

-25

Tch [

100

125

150

max.

typ.

min.

Typical Gate Charge Characteristics

VGS=f(Qg):ID=12A,Tch=25

Typical Capacitance

C=f(VDS):VGS=0V,f=1MHz

Vcc= 100V

250V

400V

Ciss

VGS [V]

C [pF]

Coss

Crss

Qg [nC]

-2

-1

VDS [V]

100

Typical Forward Characteristics of Reverse Diode

IF=f(VSD):80

s pulse test,Tch=25

Typical Switching Characteristics vs. ID

t=f(ID):Vcc=300V,VGS=10V,RG=15

td(off)

IF [A]

t [ns]

td(on)

0.1

0.00

0.25

0.50

0.75

VSD [V]

1.00

1.25

1.50

-1

ID [A]

FMC12N50ES

Maximum Avalanche Energy vs. starting Tch

E(AV)=f(starting Tch):Vcc=50V,I(AV)<=12A

FUJI POWER MOSFET

600

500

=5A

Zth(ch-c) [°C/W]

400

EAV [mJ]

300

=7A

200

=12A

100

t [sec]

starting Tch [

100

125

150

FMC12N50ES

FUJI POWER MOSFET

WARNING

1. This Catalog contains the product speciﬁcations, characteristics, data, materials, and structures as of October 2008.

The contents are subject to change without notice for speciﬁcation changes or other reasons. When using a product listed in this

Catalog, be sure to obtain the latest speciﬁcations.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either

express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device

Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or

warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which

may arise from the use of the applications described herein.

3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor

products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take

adequate safety measures to prevent the equipment from causing a physical injury, ﬁre, or other problem if any of the products

become faulty. It is recommended to make your design fail-safe, ﬂame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has

normal reliability requirements.

• Computers

• OA equipment

• Communications equipment (terminal devices)

• Measurement equipment

• Machine tools

• Audiovisual equipment

• Electrical home appliances

• Personal equipment

• Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed

below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for

such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's

product incorporated in the equipment becomes faulty.

• Transportation equipment (mounted on cars and ships)

• Trunk communications equipment

• Trafﬁc-signal control equipment

• Gas leakage detectors with an auto-shut-off feature

• Emergency equipment for responding to disasters and anti-burglary devices

• Safety devices

• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic

equipment (without limitation).

• Space equipment

• Aeronautic equipment

• Nuclear control equipment

• Submarine repeater equipment

No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device

Technology Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before

using the product.

Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in

accordance with instructions set forth herein.

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