IRHM7460SEDPBF datasheet, PDF - EEWORLD Datasheet

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IRHM7460SEDPBF: DescriptionPower Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size131KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRHM7460SEDPBF Overview

Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

IRHM7460SEDPBF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant
Other features	HIGH RELIABILITY, RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)	500 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	18 A
Maximum drain-source on-resistance	0.36 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	72 A
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD - 91394D

REPETITIVE AVALANCHE AND dv/dt RATED

IRHM7460SE

N-CHANNEL

HEXFET

TRANSISTOR

SINGLE EVENT EFFECT (SEE) RAD HARD

500Volt, 0.32Ω, (SEE) RAD HARD HEXFET

Ω

International Rectifier’s (SEE) RAD HARD technology

HEXFETs demonstrate immunity to SEE failure. Ad-

ditionally, under

identical

pre- and post-radiation test

conditions, International Rectifier’s RAD HARD

HEXFETs retain

identical

electrical specifications up

to 1 x 10

Rads (Si) total dose. No compensation in

gate drive circuitry is required. These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10

Rads (Si)/Sec, and return to normal op-

eration within a few microseconds. Since the SEE pro-

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality

and reliability in the industry.

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paral-

leling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits in space and weapons environments.

Product Summary

Part Number

IRHM7460SE

DSS

500V

DS(on)

0.32Ω

18A

Features:

Radiation Hardened up to 1 x 10

Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25°C

ID @ VGS = 12V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TSTG

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

11.7

250

2.0

±20

500

3.8

-55 to 150

Pre-Irradiation

IRHM7460SE

Units

W/°C

V/ns

300 (0.063 in. (1.6mm) from

case for 10 sec.)

9.3 (typical)

www.irf.com

10/9/98

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