SAMWIN
SW740U
N-channel TO-220 MOSFET
Features
■
High ruggedness
■
R
DS(ON)
(Max 0.55Ω)@V
GS
=10V
■
Gate Charge (Typical 38nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-220
BV
DSS
: 400V
I
D
: 10A
R
DS(ON)
: 0.55ohm
1
2
2
3
1
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low power switching
mode power appliances.
Order Codes
Item
1
Sales Type
SW P 740U
Marking
SW740
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
(note 1)
Parameter
Value
400
10*
6.3*
40
±30
1200
170
5
226
1.8
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
0.55
0.5
58
Unit
o
C/W
o
C/W
o
C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2013. Rev. 3.0
1/5
SAMWIN
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Off characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
Drain to source leakage current
Gate to source leakage current, forward
I
GSS
Gate to source leakage current, reverse
V
GS
=0V, I
D
=250uA
I
D
=250uA, referenced to 25
o
C
V
DS
=400V, V
GS
=0V
V
DS
=320V, T
C
=125
o
C
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
400
Parameter
Test conditions
Min.
SW740U
Typ.
Max.
Unit
V
0.43
1
50
100
-100
V/
o
C
uA
uA
nA
nA
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
= 5A
V
DS
=20V, I
D
=5 A
10
2.0
0.35
4.0
0.55
V
Ω
S
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
Turn off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
=320V, V
GS
=10V, I
D
=10A
(note 4,5)
V
DS
=200V, I
D
=10A, R
G
=25Ω
(note 4,5)
V
GS
=0V, V
DS
=25V, f=1MHz
1150
170
40
15
35
98
38
38
6
18
30
60
200
80
70
nC
ns
pF
Source to drain diode ratings characteristics
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Parameter
Continuous source current
Pulsed source current
Diode forward voltage drop.
Reverse recovery time
Reverse recovery Charge
Test conditions
Integral reverse p-n Junction
diode in the MOSFET
I
S
=10A, V
GS
=0V
I
S
=10A, V
GS
=0V,
dI
F
/dt=100A/us
270
2.53
Min.
Typ.
Max.
10
40
1.5
Unit
A
A
V
ns
uC
※.
Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 25.4mH, I
AS
= 10A, V
DD
= 50V, R
G
=25Ω,
Starting T
J
= 25
o
C
3.
I
SD
≤ 10A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4.
Pulse Test : Pulse Width
≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2013. Rev. 3.0
2/5
SAMWIN
Fig. 1. On-state characteristics
SW740U
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2013. Rev. 3.0
3/5
SAMWIN
Fig. 7. Maximum safe operating area
SW740U
Fig. 8. Transient thermal response curve
Fig. 9. Gate charge test circuit & waveform
Same type
as DUT
V
GS
Q
G
10V
V
DS
Q
GS
Q
GD
DUT
V
GS
2mA
Charge
nC
Fig. 10. Switching time test circuit & waveform
R
L
V
DS
90%
R
GS
V
DS
V
DD
V
IN
10%
t
d(on)
t
r
t
ON
10%
t
d(off)
t
f
t
OFF
10V
IN
DUT
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2013. Rev. 3.0
4/5
SAMWIN
Fig. 11. Unclamped Inductive switching test circuit & waveform
SW740U
Fig. 12. Peak diode recovery dv/dt test circuit & waveform
DUT
+ V
DS
V
GS
(DRIVER)
10V
-
I
S
V
DS
R
G
10V
GS
Same type
as DUT
V
DS
(DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
V
DD
L
I
S
(DUT)
I
RM
Diode reverse current
Diode recovery dv/dt
V
DD
di/dt
V
F
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2013. Rev. 3.0
5/5
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