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IRF6633TRPBF

Description
16 A, 20 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size276KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRF6633TRPBF Overview

16 A, 20 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET

IRF6633TRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionROHS COMPLIANT, ISOMETRIC-3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)41 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)59 A
Maximum drain current (ID)16 A
Maximum drain-source on-resistance0.0056 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XBCC-N3
JESD-609 codee4
Humidity sensitivity level3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)89 W
Maximum pulsed drain current (IDM)132 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceSilver/Nickel (Ag/Ni)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 97083
DirectFET™ Power MOSFET
‚
RoHS Compliant

l
Lead-Free (Qualified up to 260°C Reflow)
l
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses and Switching Losses
l
Low Profile (<0.7mm)
l
Dual Sided Cooling Compatible

l
Compatible with existing Surface Mount Techniques

l
IRF6633PbF
IRF6633TRPbF
R
DS(on)
R
DS(on)
Typical values (unless otherwise specified)
V
DSS
V
GS
20V max ±20V max 4.1mΩ@ 10V 7.0mΩ@ 4.5V
Q
g
tot
Q
gd
4.0nC
Q
gs2
1.2nC
Q
rr
32nC
Q
oss
8.8nC
V
gs(th)
1.8V
11nC
MP
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SQ
SX
ST
MQ
MX
MT
MP
DirectFET™ ISOMETRIC
Description
The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6633PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
20
Typical R DS (on) (mΩ)
Max.
20
±20
16
13
59
132
41
13
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Avalanche Current
Continuous Drain Current, V
GS
@ 10V
g
e
@ 10V
e
@ 10V
f
h
12
10
8
6
4
2
0
0
4
8
ID= 13A
A
Single Pulse Avalanche Energy
Ãg
mJ
A
ID = 16A
15
10
TJ = 125°C
5
TJ = 25°C
0
2.0
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
10.0
VDS = 16V
VDS= 10V
12
16
20
24
Notes:

Click on this section to link to the appropriate technical paper.
‚
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
Fig 1.
Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
„
T
C
measured with thermocouple mounted to top (Drain) of part.
…
Repetitive rating; pulse width limited by max. junction temperature.
†
Starting T
J
= 25°C, L = 0.51mH, R
G
= 25Ω, I
AS
= 13A.
www.irf.com
1
5/3/06

IRF6633TRPBF Related Products

IRF6633TRPBF IRF6633PBF
Description 16 A, 20 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET 16 A, 20 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction ROHS COMPLIANT, ISOMETRIC-3 ROHS COMPLIANT, ISOMETRIC-2
Contacts 3 2
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 41 mJ 41 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V
Maximum drain current (Abs) (ID) 59 A 59 A
Maximum drain current (ID) 16 A 16 A
Maximum drain-source on-resistance 0.0056 Ω 0.0056 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-XBCC-N3 R-XDSO-G2
JESD-609 code e4 e4
Humidity sensitivity level 3 3
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form CHIP CARRIER SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 89 W 89 W
Maximum pulsed drain current (IDM) 132 A 132 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Silver/Nickel (Ag/Ni) Silver/Nickel (Ag/Ni)
Terminal form NO LEAD GULL WING
Terminal location BOTTOM DUAL
Maximum time at peak reflow temperature 30 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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