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IRF6892SPBF

Description
POWER, FET
Categorysemiconductor    Discrete semiconductor   
File Size249KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRF6892SPBF Overview

POWER, FET

IRF6892SPBF Parametric

Parameter NameAttribute value
stateActive
structureSingle
drain_current_max__abs___id_125 A
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
Maximum operating temperature150 Cel
larity_channel_typeN-CHANNEL
wer_dissipation_max__abs_42 W
sub_categoryFET General Purpose Power
surface mountYES
IRF6892STRPbF
IRF6892STR1PbF
l
l
l
l
l
l
l
l
l
PD - 97770
RoHS Compliant and Halogen Free

Low Profile (<0.7 mm)
Dual Sided Cooling Compatible

Ultra Low Package Inductance
Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters
Optimized for Control FET Application
Compatible with existing Surface Mount Techniques

100% Rg tested
DirectFET
®
plus
MOSFET with Schottky Diode
‚
Typical values (unless otherwise specified)
V
DSS
Q
g
tot
V
GS
Q
gd
6.0nC
R
DS(on)
Q
gs2
2.3nC
R
DS(on)
Q
oss
16nC
25V max ±16V max 1.3mΩ @ 10V 2.0mΩ @ 4.5V
Q
rr
39nC
V
gs(th)
1.8V
17nC
G
D
S
S
D
S
Applicable DirectFET Outline and Substrate Outline

S1
S2
S3C
M2
M4
S3C
L4
L6
ISOMETRIC
L8
Description
The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6892SPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6892SPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
8.0
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
25
±16
28
22
125
220
240
22
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
10
20
30
40
ID= 22A
VDS= 20V
VDS= 13V
VDS= 5V
A
mJ
A
ID = 28A
6.0
4.0
2.0
0.0
2
4
TJ = 125°C
TJ = 25°C
6
8
10
12
14
16
50
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:

Click on this section to link to the appropriate technical paper.
‚
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
„
T
C
measured with thermocouple mounted to top (Drain) of part.
…
Repetitive rating; pulse width limited by max. junction temperature.
†
Starting T
J
= 25°C, L = 1.2mH, R
G
= 25Ω, I
AS
= 22A.
www.irf.com
1
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IRF6892SPBF Related Products

IRF6892SPBF IRF6892STR1PBF IRF6892STRPBF
Description POWER, FET POWER, FET POWER, FET
Maximum operating temperature 150 Cel 150 °C 150 °C
surface mount YES YES YES
Is it Rohs certified? - conform to conform to
Maker - International Rectifier ( Infineon ) International Rectifier ( Infineon )
Reach Compliance Code - unknown unknown
ECCN code - EAR99 EAR99
Configuration - Single Single
Maximum drain current (Abs) (ID) - 125 A 125 A
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 42 W 42 W
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