AUTOMOTIVE GRADE
PD - 97713
AUIRFS3006
Features
●
●
●
●
●
●
●
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HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
D
60V
2.0m
:
2.5m
:
270A
195A
c
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
S
G
D
2
Pak
AUIRFS3006
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Max.
d
Ãd
e
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
f
d
270
191
195
1080
375
2.5
± 20
320
See Fig. 14, 15, 22a, 22b
10
-55 to + 175
300
10lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
x
x
kl
j
Parameter
Typ.
–––
–––
Max.
0.4
40
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
08/22/11
AUIRFS3006
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
60
–––
–––
2.0
280
–––
–––
–––
–––
–––
–––
0.07
2.0
–––
–––
2.0
–––
–––
–––
–––
–––
–––
2.5
4.0
–––
–––
20
250
100
-100
Conditions
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 5mA
mΩ V
GS
= 10V, I
D
= 170A
V V
DS
= V
GS
, I
D
= 250μA
S V
DS
= 25V, I
D
= 170A
Ω
μA
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
g
d
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Effective Output Capacitance (Energy Related) –––
–––
Effective Output Capacitance (Time Related)
200
37
60
140
16
182
118
189
8970
1020
534
1480
1920
300
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 170A
V
DS
=30V
V
GS
= 10V
I
D
= 170A, V
DS
=0V, V
GS
= 10V
V
DD
= 39V
I
D
= 170A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 48V , See Fig. 11
V
GS
= 0V, V
DS
= 0V to 48V
g
ns
pF
g
i
h
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
––– 270
–––
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
A
A
Ãd
1080
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
44
–––
ns
–––
48
–––
–––
63
–––
nC
T
J
= 125°C
–––
77
–––
–––
2.4
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode.
T
J
= 25°C, I
S
= 170A, V
GS
= 0V
T
J
= 25°C
V
R
= 51V,
T
J
= 125°C
I
F
= 170A
di/dt = 100A/μs
T
J
= 25°C
g
g
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.022mH
R
G
= 25Ω, I
AS
= 170A, V
GS
=10V. Part not recommended for use
above this value .
I
SD
≤
170A, di/dt
≤
1360A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C
R
θJC
value shown is at time zero
2
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AUIRFS3006
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
D Pak
2
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device Model
RoHS Compliant
MSL1
Class M4 (+/- 800V)
AEC-Q101-002
†††
ESD
Class H3A (+/- 6000V)
AEC-Q101-001
Class C5 (+/- 2000V)
AEC-Q101-005
Yes
†††
†††
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRFS3006
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
100
10
3.5V
≤
60μs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
3.5V
1
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 170A
VGS = 10V
2.0
100
TJ = 175°C
1.5
TJ = 25°C
10
1.0
VDS = 25V
≤
60μs PULSE WIDTH
1
2.0
3.0
4.0
5.0
6.0
7.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
16000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
16
VGS, Gate-to-Source Voltage (V)
ID= 170A
12
VDS= 48V
VDS= 30V
12000
C, Capacitance (pF)
Ciss
8000
8
4000
4
Coss
Crss
0
0
40
80
120
160
200
240
280
0
1
10
VDS, Drain-to-Source Voltage (V)
100
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRFS3006
1000
10000
ID, Drain-to-Source Current (A)
TJ = 175°C
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100μsec
ISD , Reverse Drain Current (A)
100
1000
100
LIMITED BY PACKAGE
10
TJ = 25°C
1
10
1msec
10msec
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
0.1
100
VSD, Source-to-Drain Voltage (V)
VDS, Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage
Fig 8.
Maximum Safe Operating Area
80
300
Limited By Package
250
ID, Drain Current (A)
ID = 5mA
75
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
70
65
60
55
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
EAS, Single Pulse Avalanche Energy (mJ)
2.0
Fig 10.
Drain-to-Source Breakdown Voltage
1400
1200
1000
800
600
400
200
0
1.5
I D
TOP
20A
27A
BOTTOM
170A
Energy (μJ)
1.0
0.5
0.0
0
10
20
30
40
50
60
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy Vs. DrainCurrent
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