AUTOMOTIVE GRADE
PD - 97740
AUIRLR014N
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Advanced Planar Technology
Logic-Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified*
HEXFET
®
Power MOSFET
D
V
(BR)DSS
R
DS(on)
max.
I
D
55V
0.14
10A
G
S
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
D
S
D-Pak
AUIRLR014N
G
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
Max.
10
7.1
40
28
0.2
± 16
35
6.0
2.8
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Avalanche Current
Single Pulse Avalanche Energy (Thermally Limited)
Ã
d
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
e
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
R
JC
R
JA
R
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
g
Parameter
Typ.
–––
–––
–––
Max.
5.3
50
110
Units
°C/W
h
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
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1
11/10/11
AUIRLR014N
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
55
–––
–––
–––
1.0
3.1
–––
–––
–––
–––
–––
0.056
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.14
0.21
3.0
–––
25
250
100
-100
Conditions
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 6.0A
V
GS
= 4.5V, I
D
= 5.0A
V V
DS
= V
GS
, I
D
= 250μA
S V
DS
= 25V, I
D
= 6.0A
μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 150°C
nA V
GS
= 16V
V
GS
= -16V
f
f
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.5
47
12
23
4.5
7.5
265
80
38
7.9
1.4
4.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
nC
Conditions
I
D
= 6.0A
V
DS
= 44V
V
GS
= 5.0V, See Fig. 6 & 13
V
DD
= 28V
I
D
= 6.0A
R
G
= 6.2V
GS
= 5.0V
R
D
= 4.5See Fig. 10
Between lead,
f
ns
f
D
nH
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
G
S
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
37
48
10
A
40
1.3
56
71
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
D
Ã
G
S
p-n junction diode.
T
J
= 25°C, I
S
= 6.0A, V
GS
= 0V
f
T
J
= 25°C, I
F
= 6.0A
di/dt = 100A/μs
f
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L = 1.96mH
T
J
175°C.
R
G
= 25, I
AS
= 6A. (See Figure 12)
max. junction temperature. ( See fig. 11 )
Pulse width 300μs; duty cycle
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact.
When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer
to application note #AN-994.
I
SD
6.0A, di/dt
210A/μs, V
DD
V
(BR)DSS
,
2
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AUIRLR014N
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
D-PAK
MSL1
Class M1B (+/- 75V)
AEC-Q101-002
†††
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
ESD
Class H1A (+/- 300V)
AEC-Q101-001
Class C5 (+/- 2000V)
AEC-Q101-005
Yes
†††
†††
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRLR014N
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
10
VGS
VGS
TOP
TOP
15V
15V
12V
10V
10V
5.0V
7.0V
4.5V
5.0V
3.5V
4.5V
3.0V
2.7V
2.7V
BOTTOM 2.0V
BOTTOM 2.5V
100
10
VGS
VGS
15V
15V
12V
10V
10V
5.0V
7.0V
4.5V
5.0V
3.5V
4.5V
3.0V
2.7V
2.7V
BOTTOM 2.0V
BOTTOM 2.5V
TOP
TOP
1
1
2.5V
2.5V
20μs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
0.1
0.1
20μs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 175
°
C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 10A
2.0
1.5
1.0
1
0.5
0.1
2.0
V DS = 50V
20μs PULSE WIDTH
4.0
6.0
8.0
10.0
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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AUIRLR014N
500
400
Ciss
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
15
I
D
= 6 A
V
DS
= 44V
V
DS
= 27V
C, Capacitance (pF)
10
300
Coss
200
5
100
Crss
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
I
D
, Drain Current (A)
100
10us
10
T
J
= 175
°
C
100us
1
1ms
1
10ms
T
J
= 25
°
C
0.1
0.2
0.6
1.0
V
GS
= 0 V
1.4
1.8
0.1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
1
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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