PD -97680
AUTOMOTIVE GRADE
Features
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AUIRF1404S
AUIRF1404L
HEXFET
®
Power MOSFET
D
Advanced Planar Technology
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
40V
3.5mΩ
4.0mΩ
162A
75A
G
S
I
D (Package Limited)
h
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
G
S
D
S
D
G
TO-262
AUIRF1404L
D
2
Pak
AUIRF1404S
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
i
i
Max.
i
Ã
di
ei
162
115
75
650
3.8
200
1.3
± 20
519
95
20
5.0
-55 to + 175
300
h
h
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mounted, steady-state)
k
Parameter
Typ.
Max.
0.75
40
Units
°C/W
j
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
06/07/11
AUIRF1404S/L
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Min. Typ. Max. Units
40
–––
–––
2.0
106
–––
–––
–––
–––
–––
0.036
3.5
–––
–––
–––
–––
–––
–––
–––
–––
4.0
4.0
–––
20
250
200
-200
V
V/°C
mΩ
V
S
μA
nA
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 95A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 60A
V
DS
= 40V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Drain-to-Source Breakdown Voltage
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
f
i
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
35
42
17
140
72
26
7.5
7360
1680
240
6630
1490
1540
200
–––
60
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
I
D
= 95A
V
DS
= 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 95A
R
G
= 2.5Ω
R
D
= 0.21Ω
Conditions
ns
fi
fi
nH
pF
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
i
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
162
h
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 95A, V
GS
= 0V
T
J
= 25°C, I
F
= 95A
di/dt = 100A/μs
D
A
A
Ãd
650
–––
–––
1.3
V
–––
71
110
ns
–––
180
270
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
S
fi
Notes:
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L = 0.12mH
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
max. junction temperature. (See fig. 11)
R
G
= 25Ω, I
AS
= 95A. (See Figure 12)
T
J
≤
175°C.
Use IRF1404 data and test conditions.
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
I
SD
≤
95A, di/dt
≤
150A/μs, V
DD
≤
V
(BR)DSS
,
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to
80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C.
2
www.irf.com
AUIRF1404S/L
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
D2Pak
TO-262
MSL1
N/A
Class M4 (+/- 425V)
AEC-Q101-002
†††
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
ESD
Class H2 (+/- 4000V)
AEC-Q101-001
Class C5 (+/- 1125V)
AEC-Q101-005
Yes
†††
†††
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF1404S/L
1000
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
100
4.5V
4.5V
10
0.1
20μs PULSE WIDTH
T
J
= 25
°
C
1
10
100
10
0.1
20μs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 175
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 159A
2.0
1.5
100
1.0
0.5
10
4.0
V DS = 25V
20μs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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AUIRF1404S/L
12000
10000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 95A
V
DS
= 32V
V
DS
= 20V
16
C, Capacitance (pF)
8000
Ciss
12
6000
8
4000
Coss
2000
4
0
Crss
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
240
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
I
D
, Drain Current (A)
T
J
= 175
°
C
1000
10us
100us
1ms
10
10ms
100
T
J
= 25
°
C
10
1
0.4
V
GS
= 0 V
0.8
1.2
1.6
2.0
2.4
1
T
C
= 25 °C
T
J
= 175 °C
Single Pulse
1
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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5
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