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AUIRFIZ44N

Description
Advanced Planar Technology Low On-Resistance
CategoryDiscrete semiconductor    The transistor   
File Size225KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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AUIRFIZ44N Overview

Advanced Planar Technology Low On-Resistance

AUIRFIZ44N Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)31 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)45 W
surface mountNO
Base Number Matches1
AUTOMOTIVE GRADE
PD - 97767
Features
l
l
l
l
l
l
l
l
l
Advanced Planar Technology
Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS…
Sink to Lead Creepage Distantce = 4.8mm
175°C Operating Temperature
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified*
HEXFET
®
Power MOSFET
V
(BR)DSS
R
DS(on)
max.
I
D
55V
24m
31A
AUIRFIZ44N
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
G
D
S
TO-220AB Full-Pak
AUIRFIZ44N
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
Max.
31
22
160
45
0.3
± 20
210
25
4.5
5.0
-55 to + 175
300
10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
ch
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Avalanche Current
Single Pulse Avalanche Energy (Thermally Limited)
ch
dh
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
c
eh
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
JC
R
JA
Junction-to-Case
y
y
i
Parameter
Typ.
–––
–––
Max.
3.3
65
Units
°C/W
Junction-to-Ambient
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
03/14/12
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