FCX591 datasheet, PDF - EEWORLD Datasheet

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FCX591: Description1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size21KB，1 Pages; ManufacturerETC

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FCX591 Overview

1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR

FCX591 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	1 A
Maximum Collector-Emitter Voltage	60 V
Lead-free	Yes
EU RoHS regulations	Yes
state	TRANSFERRED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	FLAT
terminal coating	MATTE Tin
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	COLLECTOR
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	1 W
Transistor type	Universal small signal
Minimum DC amplification factor	15
Rated crossover frequency	150 MHz

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SOT89 PNP SILICON PLANAR MEDIUM

POWER HIGH PERFORMANCE TRANSISTOR

ISSUE 3 - NOVEMBER 1995

7

FCX591

C

PARTMARKING DETAIL -

COMPLEMENTARY TYPE -

P1

FCX491

E

B

C

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

P

tot

T

j

:T

stg

MAX.

VALUE

-80

-60

-5

-2

-1

-200

1

-65 to +150

UNIT

V

-100

-0.3

-0.6

-1.2

-1.0

100

80

15

150

10

300

MHz

pF

nA

V

CONDITIONS.

I

C

=-100

µ

A, I

E

=0

I

C

=-10mA, I

B

=0*

I

E

=-100

µ

A, I

C

=0

V

CB

=-60V

V

CES

=-60V

V

EB

=-4V, I

C

=0

I

C

=-500mA,

I

B

=-50mA*

I

C

=-1A, I

B

=-100mA*

I

C

=-1A, I

B

=-100mA*

I

C

=-1A, V

CE

=-5V*

I

C

=-1mA, V

CE

=-5V*

I

C

=-500mA, V

CE

=-5V*

I

C

=-1A, V

CE

=-5V*

I

C

=-2A, V

CE

=-5V*

I

C

=-50mA, V

CE

=-10V

f=100MHz

V

CB

=-10V, f=1MHz

UNIT

V

A

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

SYMBOL MIN.

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

Collector Cut-Off Current

Collector -Emitter Cut-Off

Current

Emitter Cut-Off Current

Saturation Voltages

I

CBO

I

CES

I

EBO

V

CE(sat)

V

BE(sat)

Base-Emitter Turn-on Voltage

Static Forward Current Transfer

Ratio

Transition Frequency

Output Capacitance

V

BE(on)

h

FE

-80

-60

-5

Breakdown Voltages

f

T

C

obo

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

For typical Characteristics graphs see FMMT591 datasheet

3 - 92

FCX591 Related Products

	FCX591	FCX591TA
Description	1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals	3	3
Transistor polarity	PNP	PNP
Maximum collector current	1 A	1 A
Maximum Collector-Emitter Voltage	60 V	60 V
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
state	TRANSFERRED	TRANSFERRED
packaging shape	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes
Terminal form	FLAT	FLAT
terminal coating	MATTE Tin	MATTE Tin
Terminal location	single	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy
structure	single	single
Shell connection	COLLECTOR	COLLECTOR
Number of components	1	1
transistor applications	switch	switch
Transistor component materials	silicon	silicon
Maximum ambient power consumption	1 W	1 W
Transistor type	Universal small signal	Universal small signal
Minimum DC amplification factor	15	15
Rated crossover frequency	150 MHz	150 MHz

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