FDP5500_F085 N-Channel UltraFET Power MOSFET
April 2009
FDP5500_F085
N-Channel UltraFET Power MOSFET
55V, 80A, 7mΩ
Features
Typ r
DS(on)
= 5.1mΩ at V
GS
= 10V, I
D
= 80A
Typ Q
g(10)
= 114nC at V
GS
= 10V
Simulation Models
-Temperature Compensated PSPICE and SABER
TM
Models
Peak Current vs Pulse Width Curve
UIS Rating Curve
Qualified to AEC Q101
RoHS Compliant
Applications
DC Linear Mode Control
Solenoid and Motor Control
Switching Regulators
Automotive Systems
Package
Symbol
D
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
G
TO-220AB
S
©2009
Fairchild Semiconductor Corporation
FDP5500_F085 Rev. A
1
www.fairchildsemi.com
FDP5500_F085 N-Channel UltraFET Power MOSFET
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
Drain to Source Voltage
V
DSS
V
DGR
V
GS
I
D
E
AS
P
D
T
L
T
pkg
Gate to Source Voltage
Drain Current Continuous (T
C
<
Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25 C
Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)
Max. Package Temp. for Soldering (Package Body for 10sec)
o
Parameter
(Note 1)
(Note 1)
V
GS
= 10V)
(Note 2)
Ratings
55
55
±20
80
See Figure 4
860
375
2.5
-55 to + 175
300
260
Units
V
V
V
A
mJ
W
W/
o
C
o
Drain to Gate Voltage (R
GS
= 20kΩ)
135
o
C,
T
J
, T
STG
Operating and Storage Temperature
C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-220AB, 1in
2
copper pad area
0.4
62
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDP5500
Device
FDP5500_F085
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V
V
DS
= 45V
V
GS
= ±20V
T
C
= 150 C
o
55
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(th)
r
DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250µA
I
D
= 80A, V
GS
= 10V
2
-
2.8
5.1
4
7
V
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(TOT)
Q
g(10)
Q
g(TH)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 20V
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
GS
= 0 to 20V
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 30V
I
D
= 80A
R
L
= 0.4Ω
I
g
= 1.0mA
-
-
-
-
-
-
-
-
3565
1310
395
207
114
6.6
17.2
52
-
-
-
269
148
8.6
-
-
pF
pF
pF
nC
nC
nC
nC
nC
FDP5500_F085 Rev. A
2
www.fairchildsemi.com
FDP5500_F085 N-Channel UltraFET Power MOSFET
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t
on
t
d(on)
t
r
t
d(off)
t
f
t
off
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 30V, I
D
= 80A,
R
L
= 0.4Ω, V
GS
= 10V,
R
GS
= 2.5Ω
-
-
-
-
-
-
-
12
34
37
23
-
75
-
-
-
-
96
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 80A
I
F
= 80A, dI
SD
/dt = 100A/µs
-
-
-
0.9
58
71
1.25
75
92
V
ns
nC
Notes:
1:
Starting T
J
= 25
o
C to175
o
C.
2:
Starting T
J
= 25
o
C, L = 0.42mH, I
AS
= 64A
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDP5500_F085 Rev. A
3
www.fairchildsemi.com
FDP5500_F085 N-Channel UltraFET Power MOSFET
Typical Characteristics
POWER DISSIPATION MULTIPLIER
1.2
I
D
, DRAIN CURRENT (A)
160
V
GS
= 10V
1.0
0.8
0.6
0.4
0.2
0.0
120
80
40
CURRENT LIMITED
BY PACKAGE
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE
(
o
C
)
175
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE
(
o
C
)
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JC
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
C
0.01
-5
10
SINGLE PULSE
10
-4
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
1
10
I
DM
,
PEAK CURRENT (A)
1000
I = I
2
175 - T
C
150
100
SINGLE PULSE
10
-5
10
10
-4
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
1
10
Figure 4. Peak Current Capability
FDP5500_F085 Rev. A
4
www.fairchildsemi.com
FDP5500_F085 N-Channel UltraFET Power MOSFET
Typical Characteristics
1000
I
D
, DRAIN CURRENT (A)
1000
I
AS
, AVALANCHE CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100
100us
100
STARTING T
J
= 25
o
C
10
LIMITED
BY PACKAGE
1ms
10ms
DC
10
STARTING T
J
= 150
o
C
1
OPERATION IN THIS SINGLE PULSE
T
J
= MAX RATED
AREA MAY BE
LIMITED BY rDS
(on)
T = 25
o
C
C
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
200
1
0.01
0.1
1
10
100
1000 5000
t
AV
, TIME IN AVALANCHE (ms)
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
160
I
D
, DRAIN CURRENT (A)
160
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
PULSE DURATION = 80
µ
s
V
GS
= 10V DUTY CYCLE = 0.5% MAX
V
GS
= 6V
V
GS
= 5.5V
I
D
, DRAIN CURRENT (A)
120
120
80
T
J
= 175 C
o
80
V
GS
= 5V
40
T
J
= 25
o
C
T
J
= -55
o
C
40
V
GS
= 4.5V
0
0
1
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
7
0
0
1
2
3
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
I
D
= 80A
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
I
D
= 80A
V
GS
= 10V
r
DS(on)
, DRAIN TO SOURCE
ON-RESISTANCE
(
m
Ω
)
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
30
20
T
J
= 175
o
C
10
T
J
= 25
o
C
0
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE
(
o
C
)
200
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDP5500_F085 Rev. A
5
www.fairchildsemi.com
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