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FQA10N80C-F109

Description
FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω
File Size420KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FQA10N80C-F109 Overview

FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω

FQA10N80C_F109 — N-Channel QFET
®
MOSFET
November 2013
FQA10N80C_F109
N-Channel QFET
®
MOSFET
800 V, 10 A, 1.1
Ω
Features
• 10 A, 800 V, R
DS(on)
= 1.1
Ω
(Max.) @ V
GS
= 10 V, I
D
= 5 A
• Low Gate Charge (Typ. 44 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested
• RoHS compliant
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable
for switched mode power supplies, active power factor
correction (PFC), and electronic lamp ballasts.
D
G
G
D
S
TO-3PN
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Drain Current
Drain Current
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
o
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
-Continuous (T
C
= 25
o
C)
-Continuous (T
C
=
- Pulsed
FQA10N80C_F109
800
10
6.32
(Note 1)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
100
o
C)
40
±
30
920
10
24
4.0
240
1.92
-55 to +150
300
- Derate above 25 C
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FQA10N80C_F109
0.52
40
Unit
o
o
C/W
C/W
©2006 Fairchild Semiconductor Corporation
FQA10N80C_F109 Rev. C1
1
www.fairchildsemi.com
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